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  id-3.1a Datasheet PDF File

For id-3.1a Found Datasheets File :: 193    Search Time::1.313ms    
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    IRF3703PBF

International Rectifier
Part No. IRF3703PBF
OCR Text ...SS 30V RDS(on) max 2.8m ID 210A Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses ...31A 54A 76A 4000 RG 20V D.U.T IAS tp + V - DD A 3000 0.01 2000 Fig 12a....
Description SMPS MOSFET

File Size 173.03K  /  8 Page

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    IRFR3410PBF IRFU3410PBF

International Rectifier
Part No. IRFR3410PBF IRFU3410PBF
OCR Text ...SS 100V RDS(on) max 39m ID 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Vo...
Description HEXFET Power MOSFET

File Size 225.25K  /  10 Page

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    APT31N60SCSG APT31N60BCS APT31N60BCSG APT31N60SCS

ADPOW[Advanced Power Technology]
Part No. APT31N60SCSG APT31N60BCS APT31N60BCSG APT31N60SCS
OCR Text ... MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current 1 All Ratings: TC = 25C unless othe...
Description Super Junction MOSFET

File Size 393.08K  /  5 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT31M100L APT31M100B2
OCR Text ...bsolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or ...
Description N-Channel MOSFET

File Size 368.12K  /  4 Page

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    IRF1405Z IRF1405ZL IRF1405ZS

International Rectifier
Part No. IRF1405Z IRF1405ZL IRF1405ZS
OCR Text ...SS = 55V G S RDS(on) = 4.9m ID = 75A Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET util...31A 53A BOTTOM 75A RG VGS 20V D.U.T IAS tp + V - DD 300 A 0.01 200 Fig 12a...
Description    AUTOMOTIVE MOSFET
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 286.46K  /  12 Page

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    IRF1404Z IRF1404ZL IRF1404ZS

International Rectifier
Part No. IRF1404Z IRF1404ZL IRF1404ZS
OCR Text ...riety of other applications. ID = 75A Absolute Maximum Ratings Parameter TO-220AB IRF1404Z D2Pak IRF1404ZS Max. 190 130 75 750...31A 53A 75A ID 400 RG VGS 20V D.U.T IAS tp + V - DD A 300 0.01 200 F...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Advanced Process Technology

File Size 300.86K  /  12 Page

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    FDD8586 FDU8586

Fairchild Semiconductor
Part No. FDD8586 FDU8586
OCR Text ...ax rDS(on) = 5.5m at VGS = 10V, ID = 35A Max rDS(on) = 8.5m at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V Low gate...31A ,VDD = 18V, VGS = 10V. FDD8586/FDU8586 Rev. B 2 www.fairchildsemi.com FDD8586/FDU858...
Description N-CHANNEL POWERTRENCH MOSFET 20V, 35A, 5.5MOHM

File Size 355.78K  /  7 Page

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    APT60M75JVFR

Advanced Power Technology
Part No. APT60M75JVFR
OCR Text ...e MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage * Avalanche Energy Rated * FAST ...31A) Ohms A 2-2006 050-7267 Rev A Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero...
Description POWER MOS V FREDFET

File Size 189.66K  /  4 Page

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    IRF1404LPBF IRF1404ZLPBF IRF1404ZSPBF IRF1404ZPBF IRF1404Z IRF1404S

IRF[International Rectifier]
Part No. IRF1404LPBF IRF1404ZLPBF IRF1404ZSPBF IRF1404ZPBF IRF1404Z IRF1404S
OCR Text ...riety of other applications. ID = 75A TO-220AB IRF1404ZPbF D2Pak TO-262 IRF1404ZSPbF IRF1404ZLPbF Absolute Maximum Ratings Para...31A 53A 75A 400 RG 20V VGS D.U.T IAS tp + V - DD A 300 0.01 200 Fig 12a...
Description AUTOMOTIVE MOSFET

File Size 326.88K  /  12 Page

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    IRF5305PBF

International Rectifier
Part No. IRF5305PBF
OCR Text ...= -55V RDS(on) = 0.06 G S ID = -31A TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -...
Description HEXFET Power MOSFET HEXFET功率MOSFET
HEXFET Power MOSFET

File Size 172.43K  /  8 Page

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