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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL
OCR Text	...S refresh, RAS-only refresh and hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low p...
Description	16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. 16M x 4bit CMOS Dynamic RAM with Extended Data Out
File Size	414.70K / 21 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
OCR Text	...S refresh, RAS-only refresh and hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low po...
Description	8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
File Size	415.47K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
OCR Text	...S refresh, RAS-only refresh and hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low po...
Description	8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
File Size	415.01K / 21 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4F641612D-TI K4F661612D-TI K4F661612D-TP K4F641612D-TP
OCR Text	...S refresh, RAS-only refresh and hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width...
Description	4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
File Size	396.62K / 35 Page	View it Online	Download Datasheet

				AMIC Technology Corporation AMIC Technology, Corp.
Part No.	A42U2604V-50 A42U2604V-50U A42U2604S-80 A42U2604S-50 A42U2604S-60 A42U2604V-60U A42U2604V-80U
OCR Text	..., RAS -only, CAS -before- RAS , hidden refresh capability n TTL-compatible, three-state I/O n JEDEC standard packages - 300mil, 24/26-pin SOJ - 300mil, 24/26-pin TSOP type II package 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE General ...
Description	4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 4米4的CMOS动态RAM与江户页面模
File Size	269.46K / 25 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	M5M465400BJ-6S M5M465160BJ-6S M5M465800BJ-6S M5M465400BJ-5S M5M465800BJ-5S M5M467400BJ-5S M5M467800BJ-5S M5M465400BTP-6S
OCR Text	...-write, CAS before RAS refresh, hidden refresh capabilities Early-write mode and OE to control output buffer impedance All inputs, outputs LVTTL compatible and low capacitance * :Applicable to self refresh version(M5M467400/465400/467800/46...
Description	FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位（16777216 - Word位）动态随机存储器
File Size	367.31K / 37 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	MH4V64AXJJ MH4V64AXJJ-6S MH4V64AXJJ-5 MH4V644AXJJ MH4V64AXJJ-5S MH4V644AXJJ-5S MH4V644AXJJ-6 MH4V644AXJJ-6S
OCR Text	...ly Ref,Normal R/W A0~A8 CBR Ref,hidden Ref Refresh Cycle 8192/64ms 4096/64ms 4096/64ms A0~A9 /RAS only Ref,Normal R/W CBR Ref,hidden Ref APPLICATION Main memory unit for computer,Microcomputer memory,Refresh memory for CRT. *:...
Description	MS3106B28-18S Circular Connector; No. of Contacts:9; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:28; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:28-1 RoHS Compliant: No FAST PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM 快速页面模68435456位（4194304字，64位）动态随机存储器
File Size	220.60K / 25 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4F641612C-TC K4F661612C-TC
OCR Text	...S refresh, RAS-only refresh and hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width,...
Description	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
File Size	850.63K / 35 Page	View it Online	Download Datasheet

				http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4E661612C-TC K4E641612C-TC50 K4E641612C-TC60 K4E641612C-TC45 K4E661612C-TC45 K4E661612C-TC60 K4E661612C-TC50 K4E641612C-T60 K4E661612C-T60 K4E661612C-45 K4E641612C-45 K4E661612C-L45 K4E661612C-60 K4E661612C-L50 K4E641612C-60 K4E641612C-50 K4E661612C-50 K4E661612C-L60 K4E641612C-TL60 K4E641612C-T50 K4E661612C-T50 K4E641612C-TL50 K4E641612C-T45 K4E641612C-TL45
OCR Text	...S refresh, RAS-only refresh and hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low p...
Description	CABLE ASSEMBLY; SMA MALE TO SMA FEMALE BULKHEAD; 50 OHM, RG58C/U COAX; 36" CABLE LENGTH; 4M x 16bit CMOS Dynamic RAM with Extended Data Out 4米16位的CMOS动态随机存储器的扩展数据输
File Size	890.21K / 36 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45
OCR Text	...S refresh, RAS-only refresh and hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricate d using Samsungs advanced CMOS process to realize high band-width, low p...
Description	8M X 8 EDO DRAM, 45 ns, PDSO32 8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输 (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
File Size	194.12K / 21 Page	View it Online	Download Datasheet

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