die cell pdf Datasheet P12 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : IR2157 SCD345MH DL1416T BU4844 GD4013 1086CM UB10BCT TC9244P
	Product Description
	Full Text Search

die cell Datasheet PDF File

For die cell Found Datasheets File :: 3603 Search Time::3.094ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

				MOTOROLA INC Motorola, Inc
Part No.	MMDF2P01HD ON2166 MMDF2P01HDR2
OCR Text	...6" thick single sided) with one die operating, 10 sec. max. ORDERING INFORMATION Device MMDF2P01HDR2 Reel Size 13 Tape Width 12 mm embos...cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter trr), have les...
Description	2 A, 12 V, 0.2 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS From old datasheet system
File Size	283.97K / 10 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. Motorola, Inc
Part No.	MMDF2P02E ON2168
OCR Text	...6" thick single sided) with one die operating, 10 sec. max. ORDERING INFORMATION Device MMDF2P02ER2 Reel Size 13 Tape Width 12 mm emboss...cell Density trr High cell Density trr tb ta t, TIME Figure 11. Reverse Recovery Time (trr) ...
Description	DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS 2 A, 20 V, 0.4 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET From old datasheet system
File Size	273.69K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MMDF2P02HD ON2170
OCR Text	...6" thick single sided) with one die operating, 10 sec. max. ORDERING INFORMATION Device MMDF2P02HDR2 Reel Size 13 Tape Width 12 mm embos...cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter trr), have les...
Description	From old datasheet system DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS
File Size	256.92K / 10 Page	View it Online	Download Datasheet

				MOTOROLA INC Motorola, Inc. ON Semi
Part No.	MMFT3055VL MMFT3055VL_D ON2227 MMFT3055VLT3
OCR Text	... 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operat...
Description	1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA TMOS POWER FET 1.5 AMPERES 60 VOLT N-hannel Enhancement-ode Silicon Gate From old datasheet system
File Size	223.69K / 10 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MMFT3055V
OCR Text	... 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operat...
Description	TMOS POWER FET 1.7 AMPERES 60 VOLTS
File Size	91.15K / 4 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTD2955V
OCR Text	...ntact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 s, Duty ...
Description	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
File Size	145.17K / 10 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronics Inc
Part No.	K9F6408U0A-TCB0 K9F6408U0A-TIB0
OCR Text	...ogram in the same page Before(M-die) 1,000us(Max.) 10 Cycles After(A-die) 500us(Max.) Main Array: 2 Cycles Spare Array: 3 Cycles Draft Da...cell to Register (tR) Before(M-die) 7us(Max.) After(A-die) 10us(Max.) Jan. 10th 2000 Final ...
Description	From old datasheet system EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC 8M x 8 Bit NAND Flash Memory
File Size	344.78K / 26 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor Maxim Integrated Products, Inc. Maixm MAXIM[Maxim Integrated Products]
Part No.	MAX2601 MAX2601ESA MAX2601-MAX2602 MAX2602ESA MAX2602 MAX2602E_D MAX2602E/D
OCR Text	...he MAX2602 is also available in die form. MAX2601/MAX2602 ______________Ordering Information PART MAX2601ESA MAX2602ESA MAX2602E/D TEMP. RANGE -40C to +85C -40C to +85C -40C to +85C PIN-PACKAGE 8 PSOPII 8 PSOPII Dice* *Dice are sp...
Description	3.6V的，1W的射频功率晶体管00MHz的应 3.6V / 1W RF Power Transistors for 900MHz Applications 3.6V, 1W RF Power Transistors for 900MHz Applications
File Size	47.40K / 6 Page	View it Online	Download Datasheet

				ON Semi MOTOROLA[Motorola, Inc]
Part No.	MGSF3442VT1 MGSF3442VT1_D ON1902 ON1901
OCR Text	...ted junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the TSOP-6 package, PD can be calculated as follows: P...
Description	N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET From old datasheet system
File Size	138.26K / 6 Page	View it Online	Download Datasheet

				ON Semi MOTOROLA[Motorola, Inc]
Part No.	MGSF3442XT1 MGSF3442XT1_D ON1904 ON1903
OCR Text	...ted junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the TSOP-6 package, PD can be calculated as follows: P...
Description	N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET From old datasheet system
File Size	82.92K / 4 Page	View it Online	Download Datasheet

For die cell Found Datasheets File :: 3603 Search Time::3.094ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |