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  case-rated bipolar transistor Datasheet PDF File

For case-rated bipolar transistor Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    BSP299 Q67000-S225 BSP299Q67000-S225

SIEMENS AG
INFINEON[Infineon Technologies AG]
SIEMENS[Siemens Semiconductor Group]
Part No. BSP299 Q67000-S225 BSP299Q67000-S225
Description transistor MOSFET SMD SOT 223
From old datasheet system
SIPMOS Small-Signal transistor (N channel Enhancement mode Avalanche rated)

File Size 168.20K  /  9 Page

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    SPD30P06P08 SPD30P06P SPD30P06PG

Infineon Technologies AG
Part No. SPD30P06P08 SPD30P06P SPD30P06PG
Description SIPMOSò Power-transistor Features Enhancement mode Avalanche rated
SIPMOS? Power-transistor Features Enhancement mode Avalanche rated

File Size 511.16K  /  10 Page

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    SPD18P06P08 SPD18P06PG

Infineon Technologies AG
Part No. SPD18P06P08 SPD18P06PG
Description SIPMOSò Power-transistor Features Enhancement mode Avalanche rated
SIPMOS? Power-transistor Features Enhancement mode Avalanche rated

File Size 521.66K  /  10 Page

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    2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR

ROHM[Rohm]
Rohm CO.,LTD.
Part No. 2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR
Description transistor | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
transistors > Medium Power bipolar transistors(0.5W-1.0W)
transistors > Small Signal bipolar transistors(up to 0.6W)
Low Vce(sat) transistor (-20V, -3A)
From old datasheet system
Low VCE(sat) transistor(低VCE(sat)晶体
Low Vce(sat) transistor (-20V/ -3A)

File Size 99.96K  /  3 Page

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    IRG4PH40K

IRF[International Rectifier]
Part No. IRG4PH40K
Description 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE bipolar transistor(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 154.31K  /  8 Page

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    IRG4BC29K IRG4BC30K IRG4BC30

IRF[International Rectifier]
Part No. IRG4BC29K IRG4BC30K IRG4BC30
Description 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE bipolar transistor(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

File Size 135.84K  /  8 Page

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    SGH30N60RUF SGH30N60RUFTU

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. SGH30N60RUF SGH30N60RUFTU
Description Discrete, Short Circuit Rated IGBT
Ceramic Multilayer Capacitor; Capacitance:2200pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Features:Feedthru; Leaded Process Compatible:Yes

File Size 563.34K  /  7 Page

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    BC847ALT1 BC847BLT1 BC847CLT1 BC848BLT1 BC850CLT1 BC849BLT1 BC846BLT1 BC850BLT1 BC848CLT1 BC849CLT1 BC848ALT1 BC849ALT1

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
Part No. BC847ALT1 BC847BLT1 BC847CLT1 BC848BLT1 BC850CLT1 BC849BLT1 BC846BLT1 BC850BLT1 BC848CLT1 BC849CLT1 BC848ALT1 BC849ALT1 BC850ALT1 BC846ALT1 BC846ALT1-D BC846ALT1_D BC847CLT1THRUBC850CLT1 BC846ALT1D BC846ALT1/D
Description CASE 318-08 STYLE 6 SOT-23 (TO-236AB)
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
CASE 318-08/ STYLE 6 SOT-23 (TO-236AB)
CIR 4C 4#0 FR PIN PLUG
High Speed CMOS Logic Triple 3-Input NOR Gates 14-PDIP -55 to 125 100 mA, 45 V, NPN, Si, SMALL SIGNAL transistor, TO-236AB
NPN Silicon General Purpose transistors NPN硅通用晶体
High Speed CMOS Logic Dual Monostable Multivibrators with Reset 16-SOIC -55 to 125 100 mA, 30 V, NPN, Si, SMALL SIGNAL transistor, TO-236AB

File Size 220.44K  /  6 Page

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    BUL146FG BUL146G

ON Semiconductor
Part No. BUL146FG BUL146G
Description bipolar Power TO220FP NPN 6A 400V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 6 A, 400 V, NPN, Si, POWER transistor, TO-220AB
SWITCHMODE NPN bipolar Power transistor

File Size 218.29K  /  11 Page

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    BUZ101SL-4

http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
Part No. BUZ101SL-4
Description Quad-Channel SIPMOS Power transistor
SIPMOS ? Power transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

File Size 89.10K  /  8 Page

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For case-rated bipolar transistor Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

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