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For calculating Found Datasheets File :: 3343 Search Time::0.985ms
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				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP60N06 MTP60N06HD MTP60N06HD_D ON2633
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	From old datasheet system TMOS POWER FET 60 AMPERES 50 VOLTS TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM
File Size	216.88K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTP6N60E
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS
File Size	153.44K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTP8N06 MTP8N06E
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
File Size	212.56K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTSF1P02HD ON2655
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	SINGLE TMOS POWER MOSFET SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM From old datasheet system
File Size	342.01K / 12 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTW33N10E ON2695
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE From old datasheet system
File Size	227.85K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTY25N60E MTY25N60E_D ON2716
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM From old datasheet system
File Size	236.67K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTY30N50E ON2718 MTY30N50E_D MTY30N50
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	From old datasheet system TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM
File Size	237.69K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTMD2C02R2
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	Power MOSFET 2 Amps / 20 Volts Power MOSFET 2 Amps, 20 Volts, Complimentary SO-8, Dual
File Size	117.29K / 16 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTP35N15
OCR Text	...various switching intervals (t) calculating td(on) and is read at a voltage corresponding to the are determined by how fast the FET input capacitance can on-state when calculating td(off). be charged by current from the generator. At high s...
Description	Power MOSFET 37 Amps / 150 Volts Power MOSFET 37 Amps, 150 Volts
File Size	73.92K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTP52N10 NTP52N10_D NTP52N10D NTP52N10/D
OCR Text	...various switching intervals (t) calculating td(on) and is read at a voltage corresponding to the are determined by how fast the FET input capacitance can on-state when calculating td(off). be charged by current from the generator. At high s...
Description	Power MOSFET 52 Amps, 100 Volts Power MOSFET 52 Amps 100 Volts
File Size	72.62K / 8 Page	View it Online	Download Datasheet

For calculating Found Datasheets File :: 3343 Search Time::0.985ms
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