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bi-cmos Datasheet PDF File

For bi-cmos Found Datasheets File :: 8242 Search Time::4.203ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	FAN4174 GB15RF120K FAN4174IP5X FAN4174IS5X
OCR Text	...back amplifier. Fabricated on a bi-cmos process. The FAN4174 features a rail-to-rail input and output and is unity gain stable. The typical non-inverting circuit schematic is shown in Figure 1. +Vs 6.8F Overdrive Recovery Overdrive of ...
Description	Single, Ultra Low Cost, RRIO CMOS Amplifier Single, Ultra-Low Cost, Rail-to-Rail I/O, CMOS Amplifier
File Size	672.25K / 11 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
Part No.	HS-7002
OCR Text	... drives Parallel: One enhanced bi-directional parallel port supporting SPP/ECP/EPP Serial Port: 16C550 UART-compatible RS-232/422/485 x 1 ...CMOS: Battery backup Power Connector: One 20-pin and one 4-pin ATX power connector Temperature: 0~...
Description	PICMG BUS SINGLE BOARD COMPUTER
File Size	179.43K / 1 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K4S280832A-TC/L1H K4S280832A-TC/L1L K4S280832A-TC/L75 K4S280832A-TC/L80
OCR Text	...ude Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. CAPACITANCE Clock (VDD = 3.3V, TA = 23C, f = 1MHz, VRE...CMOS SDRAM Version -80 120 -1H -1L -10 Unit Not e Operating current (One bank active) Pr...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	107.61K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
OCR Text	...ude Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. CAPACITANCE Clock (VDD = 3.3V, TA = 23C, f = 1MHz, VRE...CMOS(VIH /VIL=VDDQ/VSSQ) Test Condition -75 120 CMOS SDRAM Version -1H 110 1 1 20 -1L 110 U...
Description	16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	111.80K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	...ude Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. CAPACITANCE Clock (VDD = 3.3V, TA = 23C, f = 1MHz, VRE...CMOS SDRAM Version -75 90 2 2 20 Unit Note ICC1 ICC2P mA 1 ICC2PS CKE & CLK VI...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	...ude Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. CAPACITANCE Clock (VDD = 3.3V, TA = 23C, f = 1MHz, VRE...CMOS SDRAM Version -75 90 2 2 20 Unit Note ICC1 ICC2P mA 1 ICC2PS CKE & CLK VI...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S280832M-TC_L1H K4S280832M-TC_L1L K4S280832M-TC/L1L K4S280832M-TC/L1H K4S280832M-TC/L80 K4S280832M-TC/L10
OCR Text	...ude Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. 4. Dout is disabled, 0V VOUT VDDQ. CAPACITANCE Clock ...CMOS SDRAM Version -80 120 -1H 110 1 1 15 -1L 110 -10 105 Unit Note Operating current (O...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米8位4银行同步DRAM LVTTL
File Size	124.69K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S281632B-NL1H
OCR Text	...ude Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. CAPACITANCE Clock (VDD = 3.3V, TA = 23C, f = 1MHz, VRE...CMOS SDRAM ICC2PS CKE & CLK VIL(max), tCC = ICC2N CKE VIH(min), CS VIH(min), tCC = 10ns Input...
Description	128Mb SDRAM, 3.3V, LVTTL, 100MHz 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP
File Size	62.82K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL1H K4S281632B-TL1L K4S281632B-TL75 K4S281632B-TL80
OCR Text	...ude Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. CAPACITANCE Clock (VDD = 3.3V, TA = 23C, f = 1MHz, VRE...CMOS(VIH /VIL=VDDQ/VSSQ) Test Condition -75 Operating current (One bank active) Precharge standby cu...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	107.58K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4S281632C-TL1H K4S281632C-TL1L K4S281632C-TL75 K4S281632C-TP75 K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TL750
OCR Text	...ude Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. CAPACITANCE Clock (VDD = 3.3V, TA = 23C, f = 1MHz, VRE...CMOS SDRAM Version -1H 140 1 1 20 -1L 140 Unit Note mA 1 ICC2PS CKE & CLK VIL(max), ...
Description	8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	111.68K / 11 Page	View it Online	Download Datasheet

For bi-cmos Found Datasheets File :: 8242 Search Time::4.203ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |