6a 12a pdf Datasheet P12 Full Text Search --- IC-ON-LINE

6a 12a Datasheet PDF File

For 6a 12a Found Datasheets File :: 2392 Search Time::0.938ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

				FUJI[Fuji Electric]
Part No.	2SK1940 2SK1940-01
OCR Text	...S=0V Tch=125C VGS=30V VDS=0V ID=6a VGS=10V ID=6a VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=6a VGS=10V RGS=10 Tch=25C L = 100H Min. 600 2...12a 125W > Characteristics Typical Output Characteristics ID [A] 1 RDS(ON) [] ...
Description	N-channel MOS-FET
File Size	209.83K / 2 Page	View it Online	Download Datasheet

				Anpec Electronics Corop... Anpec Electronics Corporation N.A. ETC[ETC] ANPEC[Anpec Electronics Coropration]
Part No.	APM3054ND APM3054NDC APM3054NV APM3054N APM3054NUC-TR APM3054NU APM3054NDC-TR APM3054NVC-TR
OCR Text	... VGS=10V, IDS=12a VGS=4.5V, IDS=6a ISD=8A, VGS=0V 30 1 1 3 100 48 75 0.6 54 90 1.3 V A V nA m V 9 VDS=15V, VGS =5V, IDS=10A 5.4 2.4 11 VDD=15V,ID=2A, VGS=10V, RG=6 17 37 20 VGS=0V VDS=25V Frequency=1.0MHz 400 75 45 www.anpec.com.t...
Description	32BIT MCU,GPT,SIM,QSM N-Channel Enhancement Mode MOSFET
File Size	212.21K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7341Q IRF7341QTR
OCR Text	...unction diode. TJ = 25C, IS = 2.6a, VGS = 0V R TJ = 25C, I F = 2.6a di/dt = 100A/s R D S Notes: Q Repetitive rating; pulse width...12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdow...
Description	HEXFET? Power MOSFET 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| 55V V(BR)DSS \| 5.1A I(D) \| SO
File Size	135.49K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF8113 IRF8113TR
OCR Text	...to-Source Current () ID = 16.6a VGS = 10V 1.5 T J = 25C 10 (Normalized) T J = 150C 1.0 1 2.5 3.0 VDS = 15V 20s PULS...12a. Unclamped Inductive Test Circuit V(BR)DSS tp 40 0 25 50 75 100 125 150 Starting T J ,...
Description	Power MOSFET 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	204.56K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF820AL IRF820AS IRF820ASTRL IRF820ASTRR
OCR Text	...R IV E R BOTTOM ID 1.1A 1.6a 2.5A 200 RG 20V tp D .U .T IA S + V - DD A 150 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 100 50 0 25 50 75 100 125 150 Starting TJ , Junction T...
Description	500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 500V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A) Power MOSFET(Vdss=500V/ Rds(on)max=3.0ohm/ Id=2.5A)
File Size	131.42K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF820A IRF820APBF
OCR Text	...R IV E R BOTTOM ID 1.1A 1.6a 2.5A 200 RG 20V tp D .U .T IA S + V - DD A 150 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 100 50 0 25 50 75 100 125 150 Starting TJ , Junction T...
Description	500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A) Power MOSFET(Vdss=500V/ Rds(on)max=3.0ohm/ Id=2.5A)
File Size	98.33K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFP140N
OCR Text	... 600 B O TTO M 500 ID 6 .6a 1 1A 16 A IAS tp 0.01 400 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 300 200 100 0 V D D = 25 V 25 50 75 100 125 150 A 175 S tarting T J , J unc tion T ...
Description	Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rdson）\u003d 0052欧姆，身份证\u003d 33A条）
File Size	154.20K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRS20124S
OCR Text	...6 18 20 Temperature ( C) Figure 6a. Turn-On Tim e vs. Tem perature V BIAS Supply Voltage (V) Figure 6B. Turn-On Tim e vs. Supply Voltage ...12a. High Level Output vs. Temperature Low Level Output Voltage (V) 0.25 0.20 0.15 Max. 0.10 0...
Description	DIGITAL AUDIO DRIVER WITH DISCRETE DEAD-TIME AND PROTECTION
File Size	215.04K / 24 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR12CM BCR12
OCR Text	...e commutating current (di/dt)c=-6a/ms 3. Peak off-state voltage VD=400V L 10 Unit Test conditions Commutating voltage and current waveforms (inductive load) 8 400 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIM...
Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE MITSUBISHISEMICONDUCTOR(TRIAC)MEDIUMPOWERUSENON-INSULATEDTYPE.PLANARPASSIVA..
File Size	80.80K / 5 Page	View it Online	Download Datasheet

				http:// LINER[Linear Technology]
Part No.	LTC4441-1 LTC4441 LTC4441ES8-1 LTC4441EMSE LTC4441IS8-1 LTC4441IMSE
OCR Text	6a Peak Output Current Wide VIN Supply Range: 5V to 25V Adjustable Gate Drive Voltage: 5V to 8V Logic Input can be Driven Below Ground 30ns ...12a Overtemperature Protection Adjustable Blanking Time for MOSFET's Current Sense Signal (LTC4441) ...
Description	N-Channel MOSFET Gate Driver
File Size	150.72K / 12 Page	View it Online	Download Datasheet

For 6a 12a Found Datasheets File :: 2392 Search Time::0.938ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |