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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
KM48C2100B KM48V2100B KM48C2000B KM48V2000B KM48C2000BSL-5 KM48C2000BSL-7 KM48C2000BSL-6 KM48C2100BSL-5 KM48C2100BSL-6 KM48C2100BSL-7 KM48V2000BSL-5 KM48C2000BKL-5 KM48C2000BKL-6 KM48C2000BKL-7 KM48C2100BKL-5 KM48C2100BKL-6 KM48C2100BKL-7 KM48V2000BKL-5 KM48V2000BKL-6 KM48V2100BKL-5 KM48V2100BKL-6 KM48V2100BKL-7
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Description |
2M x 8bit CMOS dynamic ram with fast page mode, 3.3V, 70ns 2M x 8bit CMOS dynamic ram with fast page mode, 5V, 50ns 2M x 8bit CMOS dynamic ram with fast page mode, 5V, 70ns 2M x 8bit CMOS dynamic ram with fast page mode, 5V, 60ns 2M x 8bit CMOS dynamic ram with fast page mode, 3.3V, 50ns 2M x 8bit CMOS dynamic ram with fast page mode, 3.3V, 60ns
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File Size |
79.12K /
8 Page |
View
it Online |
Download Datasheet |
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Hynix Semiconductor
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Part No. |
HY51V17403HGJ-5 HY51V17403HGJ-6 HY51V17403HGJ-7 HY51V17403HGLJ-5 HY51V17403HGLJ-6 HY51V17403HGLJ-7 HY51V17403HGLT-5 HY51V17403HGLT-6 HY51V17403HGLT-7 HY51V17403HGT-5 HY51V17403HGT-6 HY51V17403HGT-7 HY51VS17403HGLJ-5 HY51VS17403HGLJ-6 HY51VS17403HGLJ-7
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Description |
4,194,304 words x 4 bit EDO ram, 3.3V, 50ns 4,194,304 words x 4 bit EDO ram, 3.3V, 60ns 4,194,304 words x 4 bit EDO ram, 3.3V, 70ns 4,194,304 words x 4 bit EDO ram, 3.3V, 50ns, low power 4,194,304 words x 4 bit EDO ram, 3.3V, 60ns, low power 4,194,304 words x 4 bit EDO ram, 3.3V, 70ns, low power
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File Size |
94.62K /
11 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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