520v pdf Datasheet P12 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : SF169E 2S2WHTGR B1212 2N2916A 8ETX06 C320A RBC1007 IP82C54
	Product Description
	Full Text Search

520v Datasheet PDF File

For 520v Found Datasheets File :: 592 Search Time::2.078ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

				HY ELECTRONIC CORP.
Part No.	HY4N65T
OCR Text	...dynamic total gate charge v ds =520v i d =4a v gs =10v nc gate-source charge gate-drain charge turn-on delay time v dd =325v i d =4a v gs =10v r g =25 w ns turn-on rise time turn-off delay time turn-off fall time i s =4a v gs =0v input ...
Description	650V / 4A N-Channel Enhancement Mode MOSFET
File Size	134.04K / 4 Page	View it Online	Download Datasheet

				Xian Semipower Electronic Technology Co., Ltd.
Part No.	SW7N65B SWF7N65B
OCR Text	...0v, v gs =0v 1 ua v ds =520v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - 100 na on ...
Description	N-channel TO-220F MOSFET
File Size	463.25K / 5 Page	View it Online	Download Datasheet

				HY ELECTRONIC CORP.
Part No.	HY2N65D
OCR Text	...gate-drain charge dynamic v ds =520v i d =2a v gs =10v nc turn-on delay time turn-on rise time ns v dd =325v i d =2a v gs =10v r g =25 w hy2n65d / hy2n65m electrical characteristics ( t c =25 test condition paramter drain-source break...
Description	650V / 2A N-Channel Enhancement Mode MOSFET
File Size	138.06K / 4 Page	View it Online	Download Datasheet

				SemiHow Co.,Ltd.
Part No.	HFD2N65S HFU2N65S
OCR Text	....0 --- nC nC nC VDS = 520v, ID = 1.8 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current S...
Description	650V N-Channel MOSFET
File Size	840.95K / 8 Page	View it Online	Download Datasheet

				SemiHow Co.,Ltd.
Part No.	HFP12N65S
OCR Text	...49 --- nC nC nC VDS = 520v, ID = 12 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current So...
Description	650V N-Channel MOSFET
File Size	707.65K / 8 Page	View it Online	Download Datasheet

				SemiHow Co.,Ltd.
Part No.	HFP2N65S
OCR Text	....0 --- nC nC nC VDS = 520v, ID = 1.8 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current S...
Description	650V N-Channel MOSFET
File Size	749.78K / 8 Page	View it Online	Download Datasheet

				SemiHow Co.,Ltd.
Part No.	HFS12N65S
OCR Text	...49 --- nC nC nC VDS = 520v, ID = 12 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current So...
Description	650V N-Channel MOSFET
File Size	788.23K / 7 Page	View it Online	Download Datasheet

				SemiHow Co.,Ltd.
Part No.	HFS2N65S
OCR Text	....0 --- nC nC nC VDS = 520v, ID = 1.8 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current S...
Description	650V N-Channel MOSFET
File Size	907.00K / 7 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited Inchange Semiconductor ...
Part No.	MAC97A8
OCR Text	...nt ID=0.1mA ID=0.2 mA VRRM=520v VDRM=520v 600 600 10 10 6 6 V V A A IGT Gate trigger current VD=12V; RL=100 6 35 IT=1.6A IT=0.1A ,IGT=20mA 1.7 8 1.5 1.5 VD=12V ; RL=100 1.5 1.8 mA VTM IH On-state voltage Ho...
Description	Triacs
File Size	51.69K / 1 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP2761I-A07
OCR Text	...c q gs gate-source charge v ds =520v - 10 - nc q gd gate-drain ("miller") charge v gs =10v - 15 - nc t d(on) turn-on delay time 3 v dd =320v - 16 - ns t r rise time i d =10a - 20 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 82 - ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	55.70K / 4 Page	View it Online	Download Datasheet

For 520v Found Datasheets File :: 592 Search Time::2.078ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |