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				ADPOW[Advanced Power Technology]
Part No.	APT8018 APT8018L2VR APT8018JN
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5992 rev- 2-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = ...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 050-5992 rev- 2-2001 Gate Drain Sour...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.92K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8020B2FLL APT8020LFLL
OCR Text	... OR DV NF A I 38 132 30 40 690 5.52 300 38 50 (Repetitive and Non-Repetitive) 1 4 800 Volts Watts W/C C Amps mJ -55 to 150 30...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.72K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8020B2LL APT8020LLL APT6029BLL APT6029SLL
OCR Text	...ts Amps 800 38 152 30 40 690 5.52 -55 to 150 300 38 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dis...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.99K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024B2FLL APT8024LFLL
OCR Text	... 800 31 0.240 250 1000 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[C...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.10K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024B2LL APT8024LLL
OCR Text	...s 800 31 0.240 100 500 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[C...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	57.21K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR
OCR Text	... FO AD IN 800 33 132 30 40 625 5.0 -55 to 150 300 33 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3000 STATI...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) rev- 11-99 1.01 (.040) 1.40 (.055) 2...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 33A 0.240 Ohm
File Size	39.43K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024B2VR APT8024LVR
OCR Text	... FO AD IN 800 33 132 30 40 625 5.0 -55 to 150 300 33 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3000 STATI...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 050-5950 rev- 2-2000 1.01 (.040) 1.4...
Description	POWER MOS V 800V 33A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	38.06K / 2 Page	View it Online	Download Datasheet

				Microsemi Corporation ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT8030LVFR APT8030LVFRG
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5592 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Ze...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Drain Source 0.48 (.019) 0.84 (...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	62.47K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030LVR
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5565 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Ze...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Drain Source 0.48 (.019) 0.84 (...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.26K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text	... 12 GHz * High Output Power: 17.5 dBm Typical P 1 dB at 12 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packaging Option ...106 86 66 46 21 -4 -26 -48 -68 -90 -108 -126 -144 -175 dB -27.1 -23.4 -22.6 -20.6 -18.9 -17.6 -17.3 ...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	41.75K / 3 Page	View it Online	Download Datasheet

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