5-18ghz pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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5-18ghz Datasheet PDF File

For 5-18ghz Found Datasheets File :: 385 Search Time::2.312ms
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				Excelics Semiconductor, Inc.
Part No.	EPA018A
OCR Text	...HIGH RELIABILITY Idss SORTED IN 5 mA PER BIN RANGE 320 60 D EPA018A High Efficiency Heterojunction Power FET 68 154 290 50 S ...18GHz Gain at 1dB Compression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Com...
Description	6-12V high efficiency heterojunction power FET
File Size	28.98K / 2 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MAAPGM0052-DIE
OCR Text	5 Watt Saturated Output Power Level Variable Drain Voltage (5-10V) Operation GaAs MSAGTM Process Proven Manufacturability and Reliability N...18GHz 6GHz 10GHz 15GHz 18GHz 13 14 15 16 17 18 19 20 Input Power (dBm)...
Description	Amplifier, Distributed Power 4.0-18.0 GHz
File Size	331.53K / 6 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MAAMGM0007-DIE
OCR Text	... TJ JC TB 58 Note 3 Min 4.0 Typ 5.0 16.0 Max 6.0 18.0 150 Unit V dBm C C/W C 3. Maximum MMIC Base Temperature = 150C --JC* VDD * IDD O...18GHz 1.0 2GHz 6GHz 10GHz 0.8 15GHz 18GHz Output Power (dBm) 21 18 15 12 9 6 3 0 0 1 2 3 4 ...
Description	2.0-18.0 GHz Distributed Amp/Gain Block
File Size	315.57K / 6 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA018BV
OCR Text	...HIGH RELIABILITY Idss SORTED IN 5 mA PER BIN RANGE : Via Hole Chip Thickness: 75 13 microns All Dimensions In Microns ELECTRICAL CHAR...18GHz Gain at 1dB Compression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Com...
Description	High Efficiency Heterojunction Power FET
File Size	41.28K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA018B
OCR Text	...HIGH RELIABILITY Idss SORTED IN 5 mA PER BIN RANGE * * * * Chip Thickness: 75 13 micron All Dimensions in Microns ELECTRICAL CHARA...18GHz f =12GHz f = 18GHz f=12Ghz 18.0 13.0 TYP 20.0* 20.0* 14.5 13.0 48 0.75 12.5 % dB dB 80 -2.5 mA...
Description	High Efficiency Heterojunction Power FET
File Size	89.14K / 3 Page	View it Online	Download Datasheet

				Filtronic Compound Semi... FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LMA184
OCR Text	5.5dB Typical Noise Figure 7.5dB Typical Gain 15dBm Saturated Output Power 12dB Input/Output Return Loss Typical 2-18GHz Frequency Bandwidth +4 Volts Dual Bias Supply DC Decoupled RF Output Chip Size : 1.62mmX2.38mm (.064"X.094") Chip Thick...
Description	2-18 GHz MESFET Amplifier
File Size	67.13K / 3 Page	View it Online	Download Datasheet

				Filtronic Compound Semi... FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LMA183
OCR Text	5.5dB Typical Noise Figure 7.5dB Typical Gain 15dBm Saturated Output Power 12dB Input/Output Return Loss Typical 2-18GHz Frequency Bandwidth +4 Volts Dual Bias Supply DC Decoupled RF Output Chip Size : 1.62mmX2.38mm (.064"X.094") Chip Thick...
Description	2-18 GHz MESFET Amplifier
File Size	63.58K / 3 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc. ETC[ETC]
Part No.	EPB025A
OCR Text	...50 80 -1.0 80 mA mS -2.5 V V V o Drain Breakdown Voltage Igd=10uA Source Breakdown Voltage Igs=10uA Thermal Resistance (Au-Sn Eutectic Attach) -3 -3 -5 -5 155 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLU...
Description	Low Noise High Gain Heterojunction FET
File Size	21.21K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] Excelics Semiconductor, Inc.
Part No.	EFC240B
OCR Text	...MIN 29.0 7.0 TYP 31.0 31.0 8.5 6.0 33 MAX UNIT dBm dB % 320 200 520 280 -2.5 720 mA mS -4.0 V V V o Drain Breakdown Voltage Igd=2.4mA Source Breakdown Voltage Igs=2.4mA Thermal Resistance (Au-Sn Eutectic Attac...
Description	Low Distortion GaAs Power FET
File Size	27.53K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc. ETC[ETC] List of Unclassifed Manufacturers
Part No.	EFC060B
OCR Text	...IN 23.0 9.0 TYP 25.0 25.0 10.5 8.0 35 MAX UNIT dBm dB % 80 50 130 70 -2.5 180 mA mS -4.0 V V V o Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance (Au-Sn Eutectic Attach) ...
Description	Low Distortion GaAs Power FET
File Size	20.98K / 2 Page	View it Online	Download Datasheet

For 5-18ghz Found Datasheets File :: 385 Search Time::2.312ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |