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  30.999 Datasheet PDF File

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    AD780CR AD780CR-REEL7 AD780BN AD780BR AD780BR-REEL AD780BR-REEL7 AD780AR AD780AR-REEL7 AD780 AD780AN

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AD[Analog Devices]
Analog Devices, Inc.
Part No. AD780CR AD780CR-REEL7 AD780BN AD780BR AD780BR-REEL AD780BR-REEL7 AD780AR AD780AR-REEL7 AD780 AD780AN
OCR Text ...0 -55 -55 -55 4.0 500 560 1.9 3 30 +85 +125 +125 +125 * * * * 620 2 Min 2.495 2.995 Typ Max 2.505 3.005 7 20 10 10 50 75 75 75 150 75 0.75 0.8 0.7 4 100 20 * * * * * * 1.0 1.3 1.0 * * * * * * * * * * * * * * * * * * * * * * ...
Description ECONOLINE: REC2.2-S_DRW(Z)/H* - 2.2W DIP Package- 1kVDC Isolation- Regulated Output- 4.5-9V, 9-18V, 18-36V, 36-72V Wide Input Range 2 : 1- UL94V-0
Replacement bulbs are sold in packs of ten; Light Type: Bulb; Rated Voltage: 220V; Style: Replacement bulbs; Volts & Watts: 220V10W; Applicable Model
2.5 V/3.0 V High Precision Reference 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO8

File Size 176.78K  /  10 Page

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    EL2009C EL2009CT

ELANTEC[Elantec Semiconductor]
Part No. EL2009C EL2009CT
OCR Text ...g11 I 15 I I I IV 09 14 1 30 60 45 18 10 (Note 3) IS PSRR Supply Current Supply Rejection (Note 4) 0 0 % % 25 C 25 C 65 I I 2 EL2009C 90 MHz 1 Amp Buffer Amplifier Electrical Characteristics VS e g15...
Description 90 MHz 1 Amp Buffer Amplifier

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    HI7133 HI7133CM44 HI7133CPL HI7131 HI7131CPL FN3373 HI7131CM44

INTERSIL[Intersil Corporation]
Part No. HI7133 HI7133CM44 HI7133CPL HI7131 HI7131CPL FN3373 HI7131CM44
OCR Text ...REF+ 33 CREF 32 COMMON 31 IN HI 30 IN LO 29 A-Z 28 BUFF 27 INT 26 V25 G2 24 C3 23 A3 22 G3 F1 G1 A1 B1 D2 C2 B2 A2 F2 B2 21 BP/GND D3 (100'S...999 000 999/ 1000 0.2 0.2 0.2 +000 1001 1 1 1 0.01 5 0.01 - Reading Reading Rollover Err...
Description From old datasheet system
3 1/2 Digit Low Power High CMRR LCD/LED Display-Type A/D Converters
3 1 / 2 Digit, Low Power, High CMRR, LCD/LED Display-Type A/D Converters
3 1/2 Digit, Low Power, High CMRR, LCD/LED Display-Type A/D Converters

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    IRF5806

IRF[International Rectifier]
Part No. IRF5806
OCR Text ...0 06 ) M C A S B S 0 -1 0 1 .30 (.0 5 1 ) 0 .90 (.0 3 6 ) -C 0 .1 5 (.0 0 6 ) M A X. 1 .45 (.0 5 7 ) 0 .90 (.0 3 6 ) 0 .1 0 (.0 0 4 ) 6 S...999 2 000 Y 1 2 3 4 5 6 7 8 9 0 W A B C D TOP W AFE R LO T NUMBER CO DE B OT TO M P A R...
Description Power MOSFET(Vdss=-20V)

File Size 154.77K  /  8 Page

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    PTF10021

Ericsson Microelectronics
Part No. PTF10021
OCR Text 30 Watts, 1.4-1.6 GHz GOLDMOSTM Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhance...999 1.000 0.996 0.898 0.590 0.443 0.655 0.747 0.831 0.904 0.944 0.966 0.990 S21 Ang -150.8 -156....
Description 30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦,1.4-1.6 GHzGOLDMOS场效应晶体管
30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor

File Size 277.83K  /  6 Page

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    PTF10133

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10133
OCR Text ....0 V IDQ = 1.0 A f = 894 MHz 30 20 10 0 A-12 3456 9947 1013 3 Input Power (Watts) Package 20248 RF Specifications (100% Te...999 0.995 0.996 0.998 0.997 0.997 0.993 0.991 0.989 0.987 0.993 0.989 0.982 0.982 0.990 0.990 0.986 ...
Description 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦,860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor

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    PTF10138

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTF10138
OCR Text ... Output Power (Watts) 50 40 30 20 10 0 0 1 2 3 4 1013 3456 8 270 0 Package 20256 VDD = 28 V IDQ = 500 mA f = 960 MHz 30 20 ...999 0.996 0.990 0.992 0.994 0.996 0.989 0.985 0.990 0.993 0.987 0.986 0.988 0.986 0.990 0.985 Ang...
Description 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

File Size 105.39K  /  6 Page

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    PTF10139

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10139
OCR Text ... Output Power (Watts) 50 40 30 20 10 0 0 1 2 3 4 A-1 234 561 199 101 e 39 Package 20251 VDD = 28 V IDQ = 500 mA f = 960 ...999 0.996 0.990 0.992 0.994 0.996 0.989 0.985 0.990 0.993 0.987 0.986 0.988 0.986 0.990 0.985 Ang...
Description 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦,860-960兆赫GOLDMOS场效应晶体管

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    RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-0009 PRFS-1006-0006 PRFS-1006-0005 PRFS-1006-0EVL

ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
Part No. RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-0009 PRFS-1006-0006 PRFS-1006-0005 PRFS-1006-0EVL
OCR Text ... IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM PAD TIP. 0.50 TYP 0.05 1.00 2.80 SQ TOP VIEW SIDE VIEW BOTTOM VIEW 4x4 mm Package ...999 pcs. 2 05/2003 NOTES 05/2003 3 ANADIGICS, Inc. 141 Mount Bethel Road Warren, ...
Description 3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...

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