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Fairchild Semiconductor, Corp. ITT, Corp. FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
FDP7030BLSS62Z FDB7030BLS
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| OCR Text |
...iode. features 56 a, 30 v. r ds(on) = 1 0 . 5 m w @ v gs = 10 v r ds(on) = 1 6.5 m w @ v gs = 4.5 v include...130mm x 83mm intermediate box 300 units per eo70 box 5 eo70 boxe s per per interm ediate bo x 1500 ... |
| Description |
56 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 30V的五(巴西)直|6A条(丁)|63AB TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-220AB
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| File Size |
354.76K /
11 Page |
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Fairchild Semiconductor, Corp.
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| Part No. |
2N5551IUTA
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| OCR Text |
...c = 50 ma, v ce = 5.0 v 80 80 30 250 v ce( sat ) collector-emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 50 ma, i b = 5.0...130mm x 83mm intermediate box 10,000 units maximum per intermediate box for std option fscint la... |
| Description |
600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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| File Size |
506.95K /
14 Page |
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Fairchild Semiconductor, Corp. FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
2N3904BUNL 2N3904RM
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| OCR Text |
... bl base cutoff current v ce = 30 v, v eb = 3v 50 na i cex collector cutoff current v ce = 30 v, v eb = 3v 50 na off characteristics on...130mm x 83mm intermediate box 10,000 units maximum per intermediate box for std option fscint la... |
| Description |
NPN General Purpose Amplifier 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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| File Size |
691.29K /
19 Page |
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SHENZHEN YADACON ELECT TECH
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| Part No. |
YDK-CD136
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| OCR Text |
...ent capacitors 7. ?? ? ??????? 30~60 7.lf capacitors have been stored for a long time and its leakage current exceeds the specified value, please recharge for 30 to 60 minutes with rated voltage before using. 8. ????? ???????? 8.capaci... |
| Description |
ALUMINUM ELECTROLYTIC CAPACITORS
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| File Size |
376.28K /
5 Page |
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