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Renesas Electronics, Corp. Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
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Part No. |
RJK4013DPE-00-J3 RJK4013DPE
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OCR Text |
...(S)-(1) )
D 4 1. Gate 2. Drain 3. Source 4. Drain
1
G 2 3
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage ...30 17 51 17 51 6 2 100 1.25 150 -55 to +150 Unit V V A A A A A mJ W C/W C C
Rev.1.00 Feb 02, 2007... |
Description |
Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开
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File Size |
69.66K /
4 Page |
View
it Online |
Download Datasheet
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|
 |
Renesas Electronics, Corp. Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
Part No. |
RJK4012DPE-00-J3 RJK4012DPE
|
OCR Text |
...(S)-(1) )
D 4 1. Gate 2. Drain 3. Source 4. Drain
1
G 2 3
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage ...30 15 45 15 45 5 1.4 100 1.25 150 -55 to +150 Unit V V A A A A A mJ W C/W C C
REJ03G1575-0100 Rev... |
Description |
Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开
|
File Size |
70.57K /
4 Page |
View
it Online |
Download Datasheet
|
|
|
 |
RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation. Renesas Electronics, Corp.
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Part No. |
RJK1525DPS-00-T2 RJK1525DPS
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OCR Text |
...FM)
D
G
1. Gate 2. Drain 3. Source
12
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to sour...30 17 50 17 50 17 21.6 30 4.17 150 -55 to +150
Unit V V A A A A A mJ W C/W C C
Rev.2.00 Feb 08... |
Description |
17 A, 150 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220CFM, 3 PIN Silicon N Channel MOS FET High Speed Power Switching 1 A low VF MEGA Schottky barrier rectifier, SOD128 (FlatPower), Reel Pack, SMD 通道场效应晶体管高速电源开 1 A low VF MEGA Schottky barrier rectifier, SOD123W (SOD2 FlatPower), Reel Pack, SMD 通道场效应晶体管高速电源开
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File Size |
102.00K /
7 Page |
View
it Online |
Download Datasheet
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|

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