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  3.0-5.5v Datasheet PDF File

For 3.0-5.5v Found Datasheets File :: 239890    Search Time::9.547ms    
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    Cystech Electonics Corp...
Part No. MTEA5N10J3-0-T3-G
OCR Text ...in current @ t c =100c i d 6.3 pulsed drain current *1 i dm 20 avalanche current i as 10 a avalanche energy @ l=0.15mh, i d =10a, v dd =50v *3 e ...
Description N -Channel Enhancement Mode Power MOSFET

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    Cystech Electonics Corp...
Part No. MTE011N10RH8-0-T6-G
OCR Text ... (note 3) i dm 180 *1 avalanche current @ l=0.1mh (note 3) i as 44.6 a avalanche energy @ l=1mh, i d =30a, v dd =50v (note 2, 4) e as 450 repetitive avala...
Description    N-Channel Enhancement Mode Power MOSFET

File Size 575.08K  /  10 Page

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    Cystech Electonics Corp...
Part No. MTN10N65BE3-0-UB-X
OCR Text ...@v gs =10v, t c =100 c i d 6.3* pulsed drain current @ v gs =10v (note 1) i dm 40* ava...0.125 in(0.318mm) from case for 10 seconds t l 300 c w total power dissipation (t c =25 ) ...
Description N-Channel Enhancement Mode Power MOSFET

File Size 465.37K  /  10 Page

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    Cystech Electonics Corp...
Part No. MTE130N20F3-0-T7-X
OCR Text ...=10v (note 2) 3.1 continuous drain current @t a =70 c, v gs =10v (note 2) i dsm 2.5 pulsed drain cur...0.1mh (note 3) i as 8 a single pulse avalanche en...
Description    N-Channel Enhancement Mode Power MOSFET

File Size 399.53K  /  9 Page

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    Cystech Electonics Corp...
Part No. MTN10N60BE3-0-UB-X
OCR Text ...@v gs =10v, t c =100 c i d 6.3 pulsed drain current (note 2) i dm 40 a single pulse avalanche energy @ l=5mh, i d =10 amp...0.063 in(1.6mm) from case for 10 seconds t l 300 maximum temperature for soldering @ package bo...
Description N-Channel Enhancement Mode Power MOSFET

File Size 398.07K  /  10 Page

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    ASTEC[Astec America, Inc]
Part No. MS500A-5-3 MS500A MS500A-1-2 MS500A-1-3 MS500A-4-2 MS500A-4-3 MS500A-5-2
OCR Text ...ATION Output Power: 2 = 500 W. 3 = 500 W, (N+1) or 750 W Note: All systems include Standard Shelf, Controller, Low Voltage Disconnect, one Fuse Pack, 10 ft alarm cable, and 10 ft temperature probe MS500A - - Front Side Back ...
Description    500-750 Watts

File Size 613.84K  /  2 Page

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    3103-1-00-15-00-00-08-0 31.8201 639BG B57237S0509M000 ED1003DS ZXTP25020DFL MBR0540 ECWF2W154JAQ 571-0500 571-0100 AN-97

Fairchild Semiconductor
http://
Part No. 3103-1-00-15-00-00-08-0 31.8201 639BG B57237S0509M000 ED1003DS ZXTP25020DFL MBR0540 ECWF2W154JAQ 571-0500 571-0100 AN-9717 CS85-B2GA471KYNS FDPF18N50 PHE840MB6100MB05R17 EETUQ2W221E 534202B33453G HQX104K275R2 ES1J FEB388 LCBS-12-01 GBU8J
OCR Text .................................. 3 2.Key Features ..............................................................................................0.0.2 www.fairchildsemi.com The following user guide supports the FAN9611/12 400W evaluation ...
Description Dual BCM PFC Controller

File Size 5,231.68K  /  30 Page

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    VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Part No. SUV85N03-0 SUV85N03-04P
OCR Text ... 30 "20 85a 85a 240 75 280 166c 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mountd Junction-to-...0.9 Unit _C/W C/W 1 SUV85N03-04P Vishay Siliconix New Product SPECIFICATIONS (TJ =2...
Description N-Channel 30-V (D-S) 175C MOSFET
N-channel 30-V (D-S) 175C MOSFET

File Size 40.12K  /  5 Page

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    Cystech Electonics Corp...
Part No. MTN9N60BE3-0-UB-X
OCR Text ...21 revised date : page no. : 3/10 mtn9n60be3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 0.83 thermal resistance, junction-to-ambient, max r ja ...
Description N-Channel Enhancement Mode Power MOSFET

File Size 397.88K  /  10 Page

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    RJP4003ASA-0-Q0 RJP4003ASA

Renesas Electronics Corporation
Part No. RJP4003ASA-0-Q0 RJP4003ASA
OCR Text ...P-8 <TTP-8DV>) 5 8 4 1 4 3 2 1 1, 2, 3, 4 : Collector 5, 6, 7 : Emitter 8 : Gate 5 6 7 8 Applications Strobe fl...0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 F (see performance curve) Rev.1.00 Oct 13, 2006 ...
Description Nch IGBT for Strobe Flash

File Size 130.33K  /  5 Page

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