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SEMIKRON http:// Samsung semiconductor
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Part No. |
K9WAG08U1A-I K9WAG08U1A-Y K9NBG08U5A K9NBG08U5A-P K9NBG08U5A-PCB00 K9WAG08U1A-PCB00 K9K8G08U0A-Y
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OCR Text |
...u5a document title 1g x 8 bit / 2g x 8 bit / 4g x 8 bit nand flash memory revision history the attached data sheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the right to change the specifi... |
Description |
2G X 8 FLASH 2.7V PROM, 20 ns, PDSO48 4G X 8 FLASH 2.7V PROM, 30 ns, PDSO48 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
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File Size |
1,082.19K /
50 Page |
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Samsung semiconductor
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Part No. |
K7K3236T2C K7K3218T2C
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OCR Text |
...,2D,3D,11D,3E,10E,11E,2F,3F 11F,2G,3G,11G,3J,10J,11J,3K,10K,11K,2L,3L,11L 3M,10M,11M,2N,3N,11N,3P,10P,11P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F...bit sequential for both read and write operations. Synchronous pipeline read and late write enable h... |
Description |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
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File Size |
439.86K /
19 Page |
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Samsung semiconductor
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Part No. |
K7I163682B06 K7I161882B
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OCR Text |
...,2D,3D,11D,3E,10E,11E,2F,3F 11F,2G,3G,11G,3J,10J,11J,3K,10K,11K,2L,3L,11L 3M,10M,11M,2N,3N,11N,3P,10P,11P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F...bit sequential for both read and write operations. Synchronous pipeline read and late write enable h... |
Description |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
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File Size |
411.65K /
18 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KBE00S003M
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OCR Text |
...p package memory which combines 2g bit nand flash memory(organized with two pieces of 1g bit nand flash memory) and 512mbit synchronous hi gh data rate dynamic ram.(organized with two pieces of 256mbit mobile sdram) 2gbit nand flash memor... |
Description |
1Gb NAND*2 256Mb Mobile SDRAM*2
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File Size |
1,819.19K /
86 Page |
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Samsung semiconductor
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Part No. |
K7Q161882A
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OCR Text |
...1j,11g,10e,11d,11c,3b,3c,2d, 3f,2g,3j,3l,3m,2n data inputs q 0-17 11p,10m,11l,11k,10j,11f,11e,10c,11b,2b,3d,3e, 2f,3g,3k,2l,3n,3p data outpu...bit sequential for both read and write operations. synchronous pipeline read and early write enable ... |
Description |
(K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM
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File Size |
383.93K /
17 Page |
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Samsung semiconductor Maxim Integrated Products, Inc.
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Part No. |
K7S1636U4C K7S1618U4C-EC330
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OCR Text |
...9j,10g,9f,10d,9c,9b,3b,3c,2d,3f,2g,3j,3l,3m,2n 1c,1d,2e,1g,1j,2k,1m,1n,2p data inputs q0-35 11p,10m,11l,11k,10j,11f,11e,10c,11b,9p,9n,10l 9k...bit sequential for both read and write operations, reguiring two full clock bus cycles . any request... |
Description |
512Kx36 & 1Mx18 QDR II b4 SRAM QDR SRAM, PBGA165 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
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File Size |
377.22K /
20 Page |
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
K7R643684M K7R641884M
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OCR Text |
...9J,10G,9F,10D,9C,9B,3B,3C,2D,3F,2G,3J,3L,3M,2N 1C,1D,2E,1G,1J,2K,1M,1N,2P 11P,10M,11L,11K,10J,11F,11E,10C,11B,9P,9N,10L 9K,9G,10F,9E,9D,10B,...bit sequential for both read and write operations, reguiring tow full clock bus cycles. Any request ... |
Description |
2Mx36 & 4Mx18 QDRTM II b4 SRAM
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File Size |
350.56K /
18 Page |
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Samsung Electronic
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Part No. |
K7Q323682MK7Q321882M
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OCR Text |
...1j,11g,10e,11d,11c,3b,3c,2d, 3f,2g,3j,3l,3m,2n data inputs q 0-17 11p,10m,11l,11k,10j,11f,11e,10c,11b,2b,3d,3e, 2f,3g,3k,2l,3n,3p data outpu...bit sequential for both read and write operations. synchronous pipeline read and early write enable ... |
Description |
1Mx36-bit, 2Mx18-bit QDRSRAM Data Sheet
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File Size |
441.24K /
17 Page |
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Samsung semiconductor
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Part No. |
K7S1636U4C
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OCR Text |
...9j,10g,9f,10d,9c,9b,3b,3c,2d,3f,2g,3j,3l,3m,2n 1c,1d,2e,1g,1j,2k,1m,1n,2p data inputs q0-35 11p,10m,11l,11k,10j,11f,11e,10c,11b,9p,9n,10l 9k...bit sequential for both read and write operations, reguiring two full clock bus cycles . any request... |
Description |
512Kx36 & 1Mx18 QDR II b4 SRAM
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File Size |
416.02K /
20 Page |
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it Online |
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Price and Availability
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