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  25-600 Datasheet PDF File

For 25-600 Found Datasheets File :: 140957    Search Time::1.563ms    
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    AS1117 AS1117M1 AS1117M1-X AS1117M3 AS1117M3-X AS1117R AS1117R-X AS1117S AS1117S-X AS1117T AS1117T-X AS1117U AS1117U-X A

ALPHA Semiconductor
Alpha Industries Inc
ETC[ETC]
ALPHA[Alpha Industries]
Alpha Industries, Inc.
Part No. AS1117 AS1117M1 AS1117M1-X AS1117M3 AS1117M3-X AS1117R AS1117R-X AS1117S AS1117S-X AS1117T AS1117T-X AS1117U AS1117U-X AS1117R-5V AS1117R-2.85V AS1117R-1.5V AS1117R-3.3V AS1117S-3V AS1117M1-3V AS1117U-5V AS1117T-2.5V AS1117T-2.85V AS1117M1-2.85V AS1117M1-5V AS1117M1-2.5V AS1117M3-5V AS1117S-2.5V
OCR Text ... 0.410 (10.41) 1.020 0.015 (25.910 0.381) 0.050 TYP (1.27 TYP) 0.200 0.010 (5.080 0.254) 0.100 0.010 (2.540 0.254) 0.015 0.010/-0.002 0.032 0.005 (0.813 0.127) (0.381 0.254/-0.051) 0.015 0.010/-0.015 (2.667 0.254/-0.38...
Description 800mA low dropout regulator 2,5V
800mA low dropout regulator 3V
800mA low dropout regulator 1,5V
800mA low dropout regulator 5V
800mA Low Dropout Regulator SCSI-II Active Terminator
AB 2C 2#16 SKT RECP
800mA low dropout regulator 2,85V
800mA low dropout regulator 3,3V

File Size 75.37K  /  11 Page

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    BAT54C-7 BAT54S-7 BAT54A-7 BAT54-7 BAT54 BAT54S BAT54A BAT54C

NXP Semiconductors N.V.
Diodes, Inc.
Diodes Inc.
DIODES[Diodes Incorporated]
Part No. BAT54C-7 BAT54S-7 BAT54A-7 BAT54-7 BAT54 BAT54S BAT54A BAT54C
OCR Text ... +25C TA = -25C 0 0 25 50 75 100 125 0.1 0 100 200 300 400 500 600 Tj, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 2, Typical Forward Characteristics TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Derating Curve IR, L...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE

File Size 67.16K  /  3 Page

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    BAT54CDW BAT54CDW-7 BAT54SDW-7 BAT54ADW BAT54ADW-7 BAT54BRW-7 BAT54TW BAT54TW-7 BAT54BRW BAT54SDW BAT54JW

DIODES[Diodes Incorporated]
Diodes Inc.
Part No. BAT54CDW BAT54CDW-7 BAT54SDW-7 BAT54ADW BAT54ADW-7 BAT54BRW-7 BAT54TW BAT54TW-7 BAT54BRW BAT54SDW BAT54JW
OCR Text ... 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 TOP VIEW BC C D F H M Mechanica...600 200 625 -65 to +125 Unit V mA mA mA mW C/W C Characteristic Peak Repetitive Reverse Voltage W...
Description    SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
Low-Cost, Precision, High-Side Current-Sense Amplifier

File Size 45.33K  /  2 Page

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    BAT54CW-T1 BAT54CW-T3 BAT54SW-T1 BAT54SW-T3 BAT54AW-T1 BAT54AW-T3 BAT54W-T1 BAT54W-T3 BAT54W

Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
Part No. BAT54CW-T1 BAT54CW-T3 BAT54SW-T1 BAT54SW-T3 BAT54AW-T1 BAT54AW-T3 BAT54W-T1 BAT54W-T3 BAT54W
OCR Text ...0 1.80 2.20 -- 0.10 0.90 1.10 0.25 -- 0.05 0.15 Mechanical Data ! ! ! ! ! Case: SOT-323, Molded Plastic Terminals: Plated Leads Solderab...600 200 625 -55 to +125 V mA mA mA mW K/W C Note: 1. Devices are on fiberglass substrate and k...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 表面贴装肖特基势垒二极管

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    BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES

NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES
OCR Text ...tp 1 s; 0.5 tp < 10 ms Tamb 25 C PARAMETER CONDITIONS BAT54W series MIN. MAX. UNIT - - - - - -65 - -65 30 200 300 600 200 +150 125 +125 V mA mA mA mW C C C ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise ...
Description Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes

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    BCM5402

Electronic Theatre Controls, Inc.
ETC
Broadcom
Part No. BCM5402
OCR Text ... a reduced pin-count (12 versus 25) version of the GMII utilizing standard ASIC technology. The BCM5402 is fully compatible with the IEEE 802.3 standard for auto-negotiation of speed. Additionally, several Plug and Play enhancements are add...
Description DUAL PORT 10/100/1000 BASE T GIGABIT COPPER TRANSCEIVER
Dual Port 10/100/1000BASE-T Gigabit Copper Transceiver

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    BD46295G BD46231G BD45411G BD45291G BD45292G BD45295 BD45295G BD45315 BD45315G BD45375G BD46392G BD45281G BD45282G BD452

ROHM[Rohm]
Part No. BD46295G BD46231G BD45411G BD45291G BD45292G BD45295 BD45295G BD45315 BD45315G BD45375G BD46392G BD45281G BD45282G BD45285 BD45285G BD45381G BD45382G BD45385G BD45385 BD45331G BD45332G BD45335 BD45335G BD45305G BD46305G BD45471G BD46471G BD45232G BD46232G BD45412G BD46412G BD46455G BD46472G BD46462G BD45272G BD45345G BD45275G BD46312G BD46235G BD46241G BD46261G BD46265G BD45301G BD45302G BD45305 BD45311G BD45312G BD45321G BD45322G BD45325 BD45325G BD45341G BD46242G BD46245G BD46251G BD46252G BD46255G BD46262G BD46271G BD46272G BD46275G BD46322G BD46XXXG BD45231G BD45235 BD45235G BD45241G BD45242G BD45245 BD45245G BD45251G BD45252G BD45255 BD45255G BD45261G BD45262G BD45265 BD45265G BD45271G BD45275 BD45342G BD45345 BD45351G BD45352G BD45355 BD45355G BD45361G BD45362G BD45365 BD45365G BD45371G BD45372G BD45375 BD45391G BD45392G BD45395 BD45395G BD45401G BD45402G BD45405 BD45405G BD45415 BD45415G BD45421G BD45422G BD45425 BD45425G BD45431G BD45432G BD45435 BD45435G BD45441G BD45442G BD45445 BD45445G BD45451G BD45452G BD45455 BD45455G BD45461G BD45462G BD45465 BD45465G BD45472G BD45475 BD45475G BD45481G BD45482G BD45485 BD45485G BD45XX1G BD45XX2G BD45XX5G BD45XXXG BD46281G BD46282G BD
OCR Text ...DETX0.08 -- 0.70 2.10 -- 0.75 2.25 Icc1 -- 0.80 2.40 -- 0.75 2.25 Icc2 -- 0.80 2.40 -- 0.85 2.55 VOPL 0.95 -- -- 0.4 1.2 -- IOL 2.0 5 -- -- ...600 4.646 BD46455G BD45451G BD46451G BD45452G BD46452G 4.455 4.500 4.545 BD46445G BD45441G BD46441G ...
Description VOLTAGE DETECTOR IC

File Size 443.27K  /  4 Page

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    BFG520W BFG520W_X BFG520W/X

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFG520W BFG520W_X BFG520W/X
OCR Text ...A; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C - IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C 16...600 MBG248 P tot (mW) 400 200 0 0 50 100 150 T s ( C) o 200 Fig.2 Power derating ...
Description NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors

File Size 154.15K  /  16 Page

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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-A5009-A2
OCR Text ... Continuous drain current, TC = 25 C ISO drain current TC = 85 C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbo...600 0.5 0.3 mA Tj = 25 C Tj = 150 C IH TTS(on) 0.05 0.05 150 C - s 0.5 2.5 toff ...
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
N-Channel TEMPFET

File Size 310.34K  /  9 Page

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    BUPD1520

Power Innovations Ltd
Power Innovations Limited
Part No. BUPD1520
OCR Text ... 2 and 3) 10 10 10 7 0.3 0.7 21 25 25 18 (see Notes 2 and 3) TEST CONDITIONS MIN 700 1500 11 100 100 1 1.0 1.1 1.2 1.2 3.0 V V TYP MAX UNIT ...600 800 1000 1200 1400 1600 VCE - Collector-Emitter Voltage - V VCE - Collector-Emitter ...
Description NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

File Size 114.07K  /  5 Page

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