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  204aa Datasheet PDF File

For 204aa Found Datasheets File :: 451    Search Time::0.89ms    
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    ONSEMI[ON Semiconductor]
Part No. MJ15021G MJ15020 MJ15020G MJ15021
OCR Text ... W W/_C _C MJ1502xG AYWW MEX TO-204aa (TO-3) CASE 1-07 STYLE 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RqJC Max 1.17 Unit _C/W Stresses exceeding Maximum Ratings may dama...
Description Complementary Silicon Power Transistors

File Size 149.28K  /  4 Page

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    ONSEMI[ON Semiconductor]
Part No. 2N5302 2N5302-D
OCR Text ...stg -65 to +200 CASE 1-07 TO-204aa (TO-3) THERMAL CHARACTERISTICS Characteristic Symbol JC Max Unit Thermal Resistance, Junction to Case Thermal Resistance, Case to Ambient 0.875 34 _C/W _C/W CA *Indicates JED...
Description High-Power NPN Silicon Transistor

File Size 116.47K  /  8 Page

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    IRF340 IRF340-15

IRF[International Rectifier]
Part No. IRF340 IRF340-15
OCR Text 204aa/AE) Product Summary Part Number IRF340 BVDSS RDS(on) 400V 0.55 ID 10A IRF340 400V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry an...
Description    Repetitive Avalanche Ratings
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)0.55ohm, Id=10A)
HEXFET?TRANSISTORS 400V, N-CHANNEL
400V Single N-Channel Hi-Rel MOSFET in a TO-204aa package

File Size 144.70K  /  7 Page

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    IRFAC40 IRFAC40-15

International Rectifier
Part No. IRFAC40 IRFAC40-15
OCR Text 204aa/AE) Product Summary Part Number IRFAC40 IRFAC40 600V, N-CHANNEL BVDSS RDS(on) ID 600V 1.2 6.2 The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geom...
Description Simple Drive Requirements
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204aa/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204aa/AE)

File Size 149.24K  /  7 Page

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    ON Semi
Part No. 2N5631 2N5630 2N6030 ON0064
OCR Text ...g - 65 to + 200 CASE 1-07 TO-204aa (TO-3) _C THERMAL CHARACTERISTICS (1) Characteristic Thermal Resistance, Junction to Case Symbol JC Max Unit 0.875 _C/W (1) Indicates JEDEC Registered Data. 200 150 100...
Description 100-20-40 VOLTS 200 WATTS
From old datasheet system

File Size 253.66K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. 2N5302G 2N5302_06 2N5302 2N530206
OCR Text ...ol qJC qCA Max Unit TO-204aa (TO-3) CASE 1-07 STYLE 1 Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Ambient 0.875 34 _C/W _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings...
Description High−Power NPN Silicon Transistor

File Size 89.06K  /  5 Page

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    2N3442 2N3442G

Rectron Semiconductor
ONSEMI[ON Semiconductor]
Part No. 2N3442 2N3442G
OCR Text ...CON 140 VOLTS - 117 WATTS TO-204aa (TO-3) CASE 1-07 STYLE 1 Total Device Dissipation @ TC = 25_C Derate above 25_C (Note 2) Operating and Storage Junction Temperature Range MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic...
Description High−Power Industrial Transistors

File Size 61.84K  /  4 Page

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    MJH10012 ON1970 MJ10012

MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
Part No. MJH10012 ON1970 MJ10012
OCR Text ...nt by MJ10012/D CASE 1-07 TO-204aa (TO-3) MJ10012 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIII...
Description 10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS
From old datasheet system

File Size 191.62K  /  6 Page

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    IRH7250

International Rectifier
Part No. IRH7250
OCR Text 204aa/AE) THRU-HOLE (T0-204aa/AE) Product Summary Part Number IRH7250 IRH3250 IRH4250 IRH8250 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) R DS(on) 0.11 0.11 0.11 0.11 ID 26A 26A 26A 26A IRH7250 ...
Description RADIATION HARDENED POWER MOSFET

File Size 418.93K  /  12 Page

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    IRF[International Rectifier]
Part No. JANTX2N6762 JANTXV2N6762
OCR Text 204aa/AE) [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number IRF430 BVDSS 500V RDS(on) 1.5 ID 4.5A The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient ...
Description 500V Single N-Channel Hi-Rel MOSFET in a TO-204aa package
TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

File Size 145.13K  /  7 Page

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