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  2.4-5.2ghz Datasheet PDF File

For 2.4-5.2ghz Found Datasheets File :: 1769    Search Time::5.156ms    
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    HVV1214-025

HVVi Semiconductors, Inc.
Part No. HVV1214-025
OCR Text ... Voltage 105 Unit VA IDSX Drain 2 A VGS Drain-Source Voltage 105 10 Gate-Source ValueV VW Unit VDSS Symbol Parameter Voltage P 22 Power Diss...4/29/08 For 10235Semiconductors, Gain Suite HVVi additional information: 4/29/08 EG-01-PO05X5 HVVi G...
Description L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications

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    njr
Part No. NJG1523KB2
OCR Text ...GHz at low operating voltage of 2.5V, and is operated up to 25dBm at 3.0V operating voltage. The ultra small & ultra thin FLP6 package is ap...4.VCTL2 5.PC 6.VCTL1 2 3 4 nTRUTH TABLE " H" =VCTL (H), " L" =VCTL (L) VCTL1 VCTL2 PC - P1 ...
Description RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH
SPDT SWITCH GaAs MMIC

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    njr
Part No. NJG1524PC1
OCR Text ... 3GHz at low control voltage of 2.5V. The ultra small & thin FFP16-C1package is adopted. sFEATURES lSingle low voltage control lLow insertio...4 5 6 7 8 15 14 13 sPACKAGE OUTLINE NJG1524PC1 +2.5~+6.5V 0.3dB typ.@f=1GHz, PIN=0dBm, each...
Description DPDT SWITCH GaAs MMIC

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    NJRC[New Japan Radio]
Part No. NJG1535HD3
OCR Text ...) GND GND Pin connection 1.VCTL 2.VDD 3.PC 4.P1 5.GND 6.P2 s PACKAGE OUTLINE NJG1535HD3 +2.5~+5.5V 36dBm typ. @f=2GHz, VCTL=2.7V 0.3dB typ. @f=1.0GHz, PIN=30dBm, VCTL=2.7V 28dB typ. @f=1.0GHz, PIN=30dBm, VCTL=2.7V 15uA typ. USB6-D3 (P...
Description SPDT SWITCH GaAs MMIC

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    NMA-5109 NMA-5107 NMA-5108 NMA-5110 NMA-5111 NMA-5112 NMA-5200 NMA-5300

Micronetics, Inc.
Part No. NMA-5109 NMA-5107 NMA-5108 NMA-5110 NMA-5111 NMA-5112 NMA-5200 NMA-5300
OCR Text ...0Hz-1500MHz 2GHz-18GHz FLATNESS 2.0 dB 3.0 dB 4.0 dB 4.0 dB 4.0 dB 4.0 dB 4.0 dB 5.0 dB 5.0 dB VSWR 1.5:1 1.5:1 1.5:1 1.5:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 RF OUTPUT dBm/Hz -70 +5.0, -1.0 dB -75 +5.0, -1.5 dB -77 +5.0, -2.0 dB -79 +5.0, -2.0 ...
Description HIGH POWER NOISE GENERATORS 100 HZ TO 18 GHZ

File Size 246.30K  /  1 Page

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    TIM6472-35SL TIM6472-35SL06

Toshiba Semiconductor
Part No. TIM6472-35SL TIM6472-35SL06
OCR Text ... MIN. -1.0 -5 TYP. 6500 -2.5 20 1.0 MAX. -4.0 26 1.3 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of pate...
Description MICROWAVE POWER GaAs FET

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    EC4H09C

Sanyo Semicon Device
Part No. EC4H09C
OCR Text ... Tstg Conditions Ratings 10 3.5 2.5 40 120 150 --55 to +150 Unit V V V mA mW C C Electrical Characteristics at Ta=25C Parameter Collecto...4 1.0 3 Emitter 1 2 Polarity Discriminating Mark Polarity mark (Top) Emitter Collec...
Description NPN Epitaxial Planar Silicon Transistor UHF to X Band Low-Noise Amplifier and OSC Applications

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    EC4H08C

Sanyo Semicon Device
Part No. EC4H08C
OCR Text ... Tstg Conditions Ratings 10 3.5 2.5 15 50 150 --55 to +150 Unit V V V mA mW C C Electrical Characteristics at Ta=25C Parameter Collector...4 1.0 Emitter 1 2 Polarity Discriminating Mark Polarity mark (Top) Emitter Collector ...
Description NPN Epitaxial Planar Silicon Transistor UHF to X Band Low-Noise Amplifier and OSC Applications

File Size 37.02K  /  3 Page

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    Taoglas antenna solutio...
Part No. MA501.A.AC.001
OCR Text ...antenna C gps/ dual - band 2.4 ? 5.2ghz description : 2.4ghz ? 5.2ghz suitable for ism bands/zigbee/wlan/bluetooth ieee.802.11/ieee.802.15 uv and vandal resistant p c housing ip67 & ip69k waterproof c ompl...
Description UV and vandal resistant PC housing

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    TGC4405

TriQuint Semiconductor
Part No. TGC4405
OCR Text ...um Power PHEMT Chip Dimensions: 2.07 x 1.93 x 0.1mm Measured Performance 20 18 16 14 12 10 8 6 4 2 0 Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -8dBm, +2dBm LO Primary Applications * * Point-to-Point Radio Ku Band Sat-C...
Description 17 - 27 GHz Upconverter

File Size 410.88K  /  11 Page

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