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1ns Datasheet PDF File

For 1ns Found Datasheets File :: 2386 Search Time::1.907ms
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				STMICROELECTRONICS
Part No.	STLVDS3487BTR
OCR Text	...haracteristics: t r or t f 1ns, pulse repetition rate (prr) = 50mpps, pulse width = 10 0.2ns. note b: c l includes instrumentation and fixture capacitance within 6mm of the d.u.t figure 3. voltage and current definitions f...
Description	QUAD LINE DRIVER, PDSO16
File Size	215.77K / 16 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S511633F-YPC K4S511633F K4S511633F-F1H K4S511633F-F1L K4S511633F-F75 K4S511633F-L K4S511633F-YC
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	8M x 16Bit x 4 Banks Mobile SDRAM 8米16 × 4银行移动SDRAM
File Size	111.06K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S281632M-TL80 K4S281632M K4S281632M-L10 K4S281632M-L1H K4S281632M-L1L K4S281632M-L80 K4S281632M-TC K4S281632M-TC_L10 K4S281632M-TC_L1H K4S281632M-TC_L1L K4S281632M-TC_L80 K4S281632M-TC10 K4S281632M-TC1H K4S281632M-TC1L K4S281632M-TC80 K4S281632M-TL K4S281632M-TL10 K4S281632M-TL1H K4S281632M-TL1L K4S281632M-TC/L80 K4S281632M-TC/L1L K4S281632M-TC/L1H K4S281632M-TC/L10
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	85.96K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S280832B-TL80 K4S280832B K4S280832B-TC10 K4S280832B-TC1H K4S280832B-TC1L K4S280832B-TC75 K4S280832B-TCL10 K4S280832B-TCL1H K4S280832B-TCL1L K4S280832B-TCL75 K4S280832B-TCL80 K4S280832B-TL10 K4S280832B-TL1H K4S280832B-TL1L K4S280832B-TL75 K4S280832B-TC80
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	4M x 8Bit x 4 Banks Sychronous DRAM 4米8位4银行Sychronous内存
File Size	120.23K / 10 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280432M-TC_L80 K4S280432M K4S280432M-TC_L10 K4S280432M-TC_L1H K4S280432M-TC_L1L K4S280432M-TC/L1L K4S280432M-TC/L1H K4S280432M-TC/L80 K4S280432M-TC/L10
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	MC 7P MR 16/1 PVC GOLD RoHS Compliant: Yes 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
File Size	124.58K / 10 Page	View it Online	Download Datasheet

				HYNIX SEMICONDUCTOR INC
Part No.	HY5V66DLF-P
OCR Text	...input rise/fall time t r / t f 1ns output timing measurement reference level voltage v outref 1.4 v output load capacitance for access time measurement cl 50 pf 1 parameter pin symbol min max unit input capacitance clk ci1 2.5 4 pf a0 ~ a1...
Description	4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
File Size	252.59K / 13 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT-G8
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
File Size	124.02K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	K4S283234F-M
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. assumed input rise and fall time (tr & tf) = 1ns. if tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + t...
Description	1M x 32Bit x 4 Banks SDRAM in 90FBGA Data Sheet
File Size	66.00K / 10 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416S8030 KM416S8030T-G_F10 KM416S8030T-G_F8 KM416S8030T-G_FH KM416S8030T-G_FL KM416S8030T-G/F10 KM416S8030T-G/F8 KM416S8030T-G/FH KM416S8030T-G/FL
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf)=1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]ns ...
Description	2M x 16Bit x 4 Banks Synchronous DRAM
File Size	116.68K / 10 Page	View it Online	Download Datasheet

For 1ns Found Datasheets File :: 2386 Search Time::1.907ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |