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19.6w Datasheet PDF File

For 19.6w Found Datasheets File :: 1115 Search Time::3.531ms
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				Advanced Power Technology
Part No.	APT10045JFLL
OCR Text	... 25C Tj = 125C 1.7 4.8 12 19 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.27 40 1 Repetitive Rating: Pulse w...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.41K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10045JLL
OCR Text	...YP MAX UNIT 4335 720 129 159 19 101 10 7 32 8 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.46K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT20M18LVFR APT20M18B2VFR
OCR Text	...205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector Collector 20.80 (.819) 21.46 (.845) 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.8...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL066HD4.3 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 200V 100A 0.018 Ohm
File Size	39.91K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT20M18LVR APT20M18B2VR
OCR Text	...205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector Collector 20.80 (.819) 21.46 (.845) 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.8...
Description	ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.018 Ohm
File Size	38.79K / 2 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	TDA2005 TDA2005M TDA2005S
OCR Text	... RL = 3.2 18 20 17 75 70 20 22 19 Test Conditions Min. 8 Typ. Max. 18 150 150 150 160 Unit V mV mV mA mA W f = 1kHz RL = 4 Vs = 14.4V Po...6W Vs = 13.2V RL = 3.2 Po = 50mW to 3W RL = 1.6 Vs = 13.2V Po = 40mW to 6W Vs = 14.4V, Vo = 4VRMS RL...
Description	20W BRIDGE AMPLIFIER FOR CAR RADIO 20W BRIDGE AMPLIFIER FOR CAR RADIO
File Size	259.17K / 20 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	LA4500
OCR Text	...s (2) and (20) and across pins (19) and (20) respectively. * Normally connect the heat sink of the package to GND. Proper Cares in Mounging Radiator Fin 1. The mounting torque is in the range of 39 to 59N * cm. 2. The distance between screw...
Description	5.3W 2-Channel AF Power Amplifier
File Size	628.40K / 12 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	M306N0FGTFP M306N0MCT
OCR Text	...ite Bead Choke, Feroxcube VK200 19/4B B -- Ferroxcube 56-590-65/4B Ferrite Bead T1, T2 -- 25 Ohms (UT25) Miniature Coaxial Cable, 1 turn R1 -- 11 , 1.0 W R2 -- 20 , 1/4 W L1 -- 10 Turns, #22 AWG, 1/8 I.D. L2 -- 4 Turns, #16 AWG, 1/4 I.D. L3...
Description	60 W / 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON 60 W, 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON 60 W, 225 to 400 MHz CONTROLLED Q?BROADBAND RF POWER TRANSISTOR NPN SILICON
File Size	134.51K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF899
OCR Text	... Turns 24 AWG IDIA 0.059 Choke, 19.8 nH L2, L3, L7, L9 -- 4 Turns 20 AWG IDIA 0.163 Choke L4, L5, L6, L8 -- 12 Turns 22 AWG IDIA 0.140 Choke...6W 50 25 30 0 800 820 840 860 880 900 f, FREQUENCY (MHz) VCC = 26 Vdc Icq = 300 mA 920 940 960 Pin =...
Description	RF POWER TRANSISTOR NPN SILICON
File Size	203.06K / 6 Page	View it Online	Download Datasheet

For 19.6w Found Datasheets File :: 1115 Search Time::3.531ms
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