1805-1990 pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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1805-1990 Datasheet PDF File

For 1805-1990 Found Datasheets File :: 340 Search Time::4.204ms
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				List of Unclassifed Manufacturers List of Unclassifed Man...
Part No.	TG190112
OCR Text	...ion pattern at 1710 mhz (left), 1805 mhz (right) of the tg19 antenna. sp e - 1 3 - 8 - 0 16 / a / ez page 8 of 10 figure 9. 3d radiation pattern at 1910 mhz (left), 1990 mhz (right) of the tg19 antenna. ...
Description	Mini Helical Quad-Band Cellular Antenna Connector Mount Monopole
File Size	499.14K / 10 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	MAPLST1820-030CF
OCR Text	...ase station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier...1990.0 MHz, f2 = 1990.1 MHz) Two-Tone Drain Efficiency (VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA,...
Description	RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 30W, 26V
File Size	177.62K / 5 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF180101 PTF180101S
OCR Text	1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz Description The PTF180101 is a 10 W, internally-matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and ...
Description	LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
File Size	306.52K / 10 Page	View it Online	Download Datasheet

				飞思卡尔半导体(中国)有限公司
Part No.	MRF18030BLR3
OCR Text	...mhz z source z load 1710 1785 1805 2.92 - j8.24 4.15 - j10.38 3.84 - j9.75 4.18 - j9.06 4.59 - j9.46 4.98 - j9.06 v dd = 26 v, i dq...1990 2110 15.19 - j11.85 8.61 - j12.10 5.93 - j6.66 3.82 - j5.33 f = 1710 mhz f = 2110 mhz z o ...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	344.88K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF180601 PTF180601C PTF180601E
OCR Text	1805-1880 MHz, 1930-1990 MHz Description The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability. EDGE EVM Perf...
Description	LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS的场效应晶体0瓦，DCS / PCS的兆赫波8050年，1930-1990兆赫 LDMOS Field Effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
File Size	229.29K / 11 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF18030BLR3 MRF18030BLSR3
OCR Text	...out = 30 W (CW) f MHz 1710 1785 1805 1840 1880 1960 1990 2110 Zsource 2.92 - j8.24 3.84 - j9.75 4.15 - j10.38 4.04 - j10.22 6.12 - j12.29 6.20 - j12.29 8.61 - j12.10 15.19 - j11.85 Zload 4.18 - j9.06 4.59 - j9.46 4.98 - j9.06 6.10 - j7.63...
Description	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS
File Size	341.89K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	PTF180601
OCR Text	...t transistor 60 w, dcs/pcs band 1805?1880 mhz, 1930?1990 mhz description the ptf180601 is a 60 w, internally matched goldmos fet intended for edge applications in the dcs/pcs band. full gold metallization ensures excellent device lifetim...
Description	LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
File Size	231.50K / 11 Page	View it Online	Download Datasheet

				Freescale (Motorola)
Part No.	MRF18030BLSR3 MRF18030BSR3 MRF18030BR3 MRF18030BLR3
OCR Text	...z z source ? z load ? 1710 1785 1805 2.92 ? j8.24 4.15 ? j10.38 3.84 ? j9.75 4.18 ? j9.06 4.59 ? j9.46 4.98 ? j9.06 ...1990 2110 15.19 ? j11.85 8.61 ? j12.10 5.93 ? j6.66 3.82 ? j5.33 ...
Description	GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
File Size	205.67K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MRF18030B
OCR Text	...out = 30 W (CW) f MHz 1710 1785 1805 1840 1880 1960 1990 2110 Zin Zin 2.92 + j8.24 3.84 + j9.75 4.15 + j10.38 4.04 + j10.22 6.12 + j12.29 6.20 + j12.29 8.61 + j12.10 15.19 + j11.85 ZOL* 4.18 + j9.06 4.59 + j9.46 4.98 + j9.06 6.10 + j7.63 ...
Description	MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
File Size	265.80K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF7G21LS-160-15
OCR Text	... 1080 ma; p l = 160 w (cw); f = 1805 mhz. table 6. characteristics t j = 25 c. symbol parameter conditions min typ max unit v (br)dss dra...1990 mhz (4) d at f = 1930 mhz (5) d at f = 1960 mhz (6) d at f = 1990 mhz fig 1. power gain a...
Description	Power LDMOS transistor
File Size	261.34K / 14 Page	View it Online	Download Datasheet

For 1805-1990 Found Datasheets File :: 340 Search Time::4.204ms
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