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14m Datasheet PDF File

For 14m Found Datasheets File :: 396 Search Time::0.938ms
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				SIPEX[Sipex Corporation]
Part No.	SP7661EB SP7661ER SP76611 SP7661
OCR Text	...ductor on this demo board, DCR= 14m nominal. POWER SUPPLY DATA The SP7661ER is designed with an accurate 2.0% reference over line, load and temperature. Figure 1 data shows a typical SP7661 evaluation board efficiency plot, with efficiencie...
Description	Evaluation Board Manual
File Size	382.56K / 11 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NB6L14mMNG NB6L14mMNR2G NB6L14m
OCR Text	...-16 MN SUFFIX CASE 485G 16 NB6L 14m ALYWG G The NB6L14m is a 3.0 GHz differential 1:4 CML fanout buffer. The differential inputs incorporate internal 50 W termination resistors that are accessed through the VT pin. This feature allows th...
Description	2.5 V/3.3 V 3.0 GHz Differential 1:4 CML Fanout Buffer
File Size	146.68K / 11 Page	View it Online	Download Datasheet

				Quanzhou Jinmei Electronic ... Mitsubishi Electric Semicon...
Part No.	RD00HHS1 RD00HHS1-15
OCR Text	...470pF RD00HHS 1 4m m 8m m 22m m 14m m L4 RF-OUT L1:LA L04NAR27(0.27m H) L2:LA L04NA R39(0.39uH) L3:LA L04NA R39(0.39uH) L4:LAL04NA 1R0(1uH) C1,C2:100pF,0.022uF,0.1uF in parallel Note:B oard m aterial-glas s epox i s ubs trate M ic ro s t...
Description	RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
File Size	122.09K / 6 Page	View it Online	Download Datasheet

				ALPHA & OMEGA Semiconductor ETC[ETC] List of Unclassifed Manufacturers
Part No.	AO8802
OCR Text	...ON) < 13m (VGS = 10V) RDS(ON) < 14m (VGS = 4.5V) RDS(ON) < 19m (VGS = 2.5V) RDS(ON) < 27m (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25C unless ot...
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	273.52K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semicondu... Alpha & Omega Semiconductors
Part No.	AO8808A AO8808AL
OCR Text	...ID = 7.9A (VGS = 10V) RDS(ON) < 14m (VGS = 10V) RDS(ON) < 15m (VGS = 4.5V) RDS(ON) < 20m (VGS = 2.5V) RDS(ON) < 28m (VGS = 1.8V) ESD Rating: 2000V HBM TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 D1 D2 G1 S1 G2 S2...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	105.27K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9918H AP9918J
OCR Text	... D BVDSS RDS(ON) ID 20V 14m 45A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	81.42K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Powerex Power Semiconductors
Part No.	FS70VSH-03
OCR Text	.................................. 14m ID ......................................................................................... 70A Integrated Fast Recovery Diode (TYP.) ............. 70ns q q GATE w DRAIN e SOURCE r DRAIN e TO-22...
Description	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	43.58K / 4 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4433
OCR Text	...= -11 A (V GS = -20V) RDS(ON) < 14m (VGS = -20V) RDS(ON) < 18m (VGS = -10V) ESD Rating: 1.5KV HBM SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Vol...
Description	P-Channel Enhancement Mode Field Effect Transistor
File Size	146.59K / 4 Page	View it Online	Download Datasheet

				CET[Chino-Excel Technology]
Part No.	CEP63A3 CEB63A3
OCR Text	14m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D CEP63A3/CEB63A3 D G G D S S CEB SERIES TO-263(DD-PAK...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	297.23K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDI2532 FDP2532 FDB2532 FDP2532NL
OCR Text	...9A, 16m Features * r DS(ON) = 14m (Typ.), VGS = 10V, ID = 33A * Qg(tot) = 82nC (Typ.), VGS = 10V * Low Miller Charge * Low QRR Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101 Formerly developmental...
Description	N-Channel PowerTrench MOSFET 150V, 79A, 16m?/a> 150V Channel UltraFET Trench MOSFET N-Channel PowerTrench MOSFET 150V, 79A, 16mOhm N-Channel PowerTrench MOSFET 150V, 79A, 16mз N-Channel PowerTrench MOSFET 150V/ 79A/ 16m
File Size	211.20K / 11 Page	View it Online	Download Datasheet

For 14m Found Datasheets File :: 396 Search Time::0.938ms
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