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  100a 800v Datasheet PDF File

For 100a 800v Found Datasheets File :: 1199    Search Time::3.64ms    
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    STMICROELECTRONICS[STMicroelectronics]
Part No. STW18NK80Z_06 STW18NK80Z STW18NK80Z06
OCR Text ...ecovery time ISD = 18A, di/dt = 100a/s, Reverse recovery charge VDD = 40V, Tj = 25C Reverse recovery current (see Figure 15) Reverse recovery time ISD = 18A, di/dt = 100a/s, Reverse recovery charge VDD = 40V, Tj = 150C Reverse recovery curr...
Description N-channel 800v - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH Power MOSFET
N-channel 800v - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH?/a> Power MOSFET
N-channel 800v - 0.34ヘ - 19A - TO-247 Zener-protected SuperMESH⑩ Power MOSFET

File Size 244.01K  /  14 Page

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    ADPOW[Advanced Power Technology]
Part No. APT8014JLL_03 APT8014JLL APT8014JLL03
OCR Text ...y Time (IS = -ID52A, dl S /dt = 100a/s) Reverse Recovery Charge (IS = -ID52A, dl S/dt = 100a/s) Peak Diode Recovery dv/ dt 5 Q V/ns ...800v TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right t...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 91.89K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT8011JLL_04 APT8011JLL APT8011JLL04
OCR Text ...y Time (IS = -ID51A, dl S /dt = 100a/s) Reverse Recovery Charge (IS = -ID51A, dl S/dt = 100a/s) Peak Diode Recovery dv/ dt 5 Q V/ns ...800v TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right t...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 108.41K  /  5 Page

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    ST Microelectronics
Part No. P6NC80
OCR Text ...ure 150 c (1)i sd 5.4a, di/dt 100a/s, v dd v (br)dss ,t j t jmax . (*)pulse width limited by maximum temperature allowed to-220 1 2 3 to-220fp 1 2 3 i2pak (tabless to-220) 1 3 d2pak stp6nc80z/fp/stp6nc80z-1 2/13 thermal data avalanc...
Description Search --To STP6NC80

File Size 442.14K  /  13 Page

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    STB12NK80Z STB12NK80Z07 STP12NK80Z STW12NK80Z

STMicroelectronics
Part No. STB12NK80Z STB12NK80Z07 STP12NK80Z STW12NK80Z
OCR Text ...ce on resistance VDS= VGS, ID = 100a VGS= 10V, ID = 5.25A 3 3.75 0.65 4.5 0.75 Table 5. Symbol gfs (1) Dynamic Parameter Test conditions Min. Typ. 12 2620 250 53 100 87 14 44 30 18 70 20 16 15 28 Max. Unit S pF pF pF pF nC nC nC...
Description N-channel 800v - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH?/a> Power MOSFET
N-channel 800v - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH Power MOSFET
N-channel 800v - 0.65楼? - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH垄芒 Power MOSFET
N-channel 800v - 0.65ヘ - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH⑩ Power MOSFET

File Size 495.98K  /  16 Page

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    AOK5N100

Alpha & Omega Semiconductors
Part No. AOK5N100
OCR Text ...e recovery charge i f =5a,di/dt=100a/ m s,v ds =100v turn-off fall time body diode reverse recovery time i f =5a,di/dt=100a/ m s,v ds =100v ...800v i d =5a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance ch...
Description 1000V,4A N-Channel MOSFET

File Size 286.13K  /  5 Page

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    SGS Thomson Microelectronics
Part No. STP6NC80Z
OCR Text ...re 150 c (1)i sd 5.4a, di/dt 100a/ m s, v dd v (br)dss ,t j t jmax . (*)pulse width limited by maximum temperature allowed to-220 1 2 3 to-220fp 1 2 3 i pak (tabless to-220) stp6nc80z/fp/stp6nc80z-1 2/11 thermal data avalanche charac...
Description N-CHANNEL 800v 1.5OHM 5.4A TO-220/TO-220FP/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFET

File Size 122.69K  /  11 Page

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