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  1000v s Datasheet PDF File

For 1000v s Found Datasheets File :: 6850    Search Time::3.578ms    
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    NTE[NTE Electronics]
Part No. NTE2313
OCR Text .... . . . . . . . . . . . . . . . 1000v Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....s s s IC = 500mA, VCE = 10V, f = 1MHz 4 - - MHz IC = 1A, IB = 0.2A 30 - - - 50 - - - - 0.8 1.0 1.1 V...
Description silicon NPN Transistor High speed switch

File Size 21.37K  /  2 Page

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    NTE[NTE Electronics]
Part No. NTE2327
OCR Text .... . . . . . . . . . . . . . . . 1000v Collector-Emitter Voltage (Open base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...s s s Unit A mA mA Note 2. Measured with a half sine-wave voltage. .330 (8.38) Max .175 (4....
Description silicon NPN Transistor High Voltage, High speed switch

File Size 20.03K  /  2 Page

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    NTE[NTE Electronics]
Part No. NTE2333
OCR Text .... . . . . . . . . . . . . . . . 1000v Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....s s ns ns s s MHz pF pF V V V V V V V V 1000 1500 VCE(dsat) Dynamic saturation Voltage: Determ...
Description silicon NPN Power Transistor for switching Power Applications

File Size 28.70K  /  3 Page

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    Microsemi
Part No. APTM100UM65sCAVG
OCR Text ...mosfet power modul e v dss = 1000v r dson = 65m ? typ @ tj = 25c i d = 145a @ tc = 25c downloaded from: http:/// aptm100um65...s t j = 25c 280 ns t j = 125c 350 q rr reverse recovery charge t j = 25c 3 ...
Description single switch series And Parallel Diodes

File Size 334.29K  /  9 Page

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    Microsemi
Part No. APT2X100DQ100J APT2X101DQ100J
OCR Text ...ectifier diode apt2x101dq100j 1000v 100a apt2x100dq100j 1000v 100a 053-4231 rev d 3-2011 anti-paralle l p aralle l 2 1 3 23 4 14...s o t -2 2 7 is ot op ? 1 2 3 4 file # e145592 "ul recognized" microsemi website - http://www.micros...
Description High Voltage Fast Recovery Diode

File Size 108.53K  /  4 Page

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    Microsemi
Part No. APTDF200H100G
OCR Text ... ac1 + ac2 - v rrm = 1000v i c = 200a @ tc = 70c application ? uninterruptible power supply (ups) ? induction heating ...s t j = 25c 43 ns t j = 25c 290 t rr reverse recovery time t j = 125c 340 ...
Description FRED 50-1700V

File Size 379.47K  /  5 Page

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    Microsemi
Part No. APTDF100H100G
OCR Text ...1 + ac2 - v rrm = 1000v i c = 100a @ tc = 70c application ? uninterruptible power supply (ups) ? induction heating ...s t j = 25c 45 ns t j = 25c 290 t rr reverse recovery time t j = 125c 340 ...
Description FRED 50-1700V

File Size 359.94K  /  5 Page

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    2-1393809-1 2-1393809-3 2-1393809-4 2-1393810-9 2-1393810-0 2-1393810-2 2-1393810-3 2-1393810-5 2-1393818-0 2-1393810-1

Tyco Electronics
TE Connectivity Ltd
Part No. 2-1393809-1 2-1393809-3 2-1393809-4 2-1393810-9 2-1393810-0 2-1393810-2 2-1393810-3 2-1393810-5 2-1393818-0 2-1393810-1 2-1393810-4 2-1393810-6 2-1393810-7 2-1393818-2 2-1393808-8 1419147-6
OCR Text ...en contact / contact 500v rms 1000v rms between contact / frame 500v rms 1000v rms between contact / coil 1000v rms 1500v rms initial insulation resistance, at 500vdc > 106 other data material compliance: eu rohs/elv, ...
Description Cradle N Relay V23154/V23162
Great variety of contact arrangements and materials to meet specific applications

File Size 1,673.19K  /  10 Page

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    FQD2N100TM

Fairchild Semiconductor
Part No. FQD2N100TM
OCR Text 1000v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to ...
Description 1000v N-Channel MOsFET
&nbsp;&nbsp;&nbsp;1000v N-Channel MOsFET

File Size 729.41K  /  9 Page

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