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  10.943 Datasheet PDF File

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    BYD127

NXP Semiconductors
Part No. BYD127
OCR Text 10 1999 nov 15 discrete semiconductors byd127 ultra fast low-loss rectifier b ook, halfpage m3d121 1999 nov 15 2 philips semiconductors pr...943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon t...
Description Ultra fast low-loss rectifier

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    BAT254

Philips Semiconductors
Part No. BAT254
OCR Text ...temperature tp 1 s; 0.5 tp < 10 ms CONDITIONS - - - - -65 - -65 MIN. MAX. 30 200 300 600 +150 125 +125 V mA mA mA C C C UNIT 1999 Apr ...943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon To...
Description Schottky barrier diode

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    Philips
Part No. BAT760
OCR Text ...TIONS see Fig.2 and note 1 IF = 10 mA IF = 100 mA IF = 1 A IR reverse current see Fig.3 and note 1 VR = 5 V VR = 8 V VR = 15 V Cd Note 1. Pu...943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon To...
Description Schottky barrier diode

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    Motorola Mobility Holdings, Inc.
Part No. BCX70SERIES
OCR Text ...20 na h fe dc current gain i c =10 m a; v ce =5v bcx70g --- bcx70h 40 -- bcx70j 30 -- bcx70k 100 -- dc current gain i c = 2 ma; v ce =5v bcx...943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v...
Description NPN general purpose transistors NPN通用型晶体管

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    BB142 BB142115

NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
Part No. BB142 BB142115
OCR Text ...on temperature in series with a 10 k resistor CONDITIONS - - - -55 -55 MIN. 6 8 20 +150 +150 MAX. V V mA C C UNIT ELECTRICAL CHARACTERIST...943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon To...
Description 4.6 pF, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode

File Size 45.84K  /  8 Page

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    3M Company
3M ELECTRONIC PRODUCTS DIVISION
Part No. DIN-048CSC-PS-TG30 DIN-048CSC-PSL-TG30 DIN-048CSC-PSL-GG30 DIN-016CSA-R3L-GG30 DIN-016CSA-R1L-GG30 DIN-032CSA-R1L-GG30 DIN-016CSA-S1-MH DIN-032CSA-R1L-RR DIN-080CSD-R1L-RR DIN-016CSE-PW2-GG30
OCR Text ...ient insulation resistance: 1 x 10 3 m min. at 500 v dc withstanding voltage: 1 x 10 3 v ac for 1 minute environmental temperature rati...943 [49.35] 1.500 [38.10] 032 b 2.140 [54.36] 1.746 [44.35] 1.943 [49.35] 1.500 [38.10] 048 c 2.140 ...
Description 48 CONTACT(S), FEMALE, STRAIGHT TWO PART EURO CONNECTOR, PRESS FIT, SOCKET
16 CONTACT(S), FEMALE, STRAIGHT TWO PART EURO CONNECTOR, SOLDER, SOCKET
32 CONTACT(S), FEMALE, STRAIGHT TWO PART EURO CONNECTOR, SOLDER, SOCKET
80 CONTACT(S), FEMALE, STRAIGHT TWO PART EURO CONNECTOR, SOLDER, SOCKET
16 CONTACT(S), FEMALE, STRAIGHT TWO PART EURO CONNECTOR, PRESS FIT, SOCKET

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    NXP Semiconductors N.V.
Part No. 934005380115
OCR Text ...= 0; v cb =25v; t j = 150 c -- 10 m a i ebo emitter cut-off current i c = 0; v eb =5v -- 100 na h fe dc current gain i c = 5 ma; v ce =10v ...943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v...
Description 1 A, 20 V, NPN, Si, POWER TRANSISTOR PLASTIC, MPT3, SMD, UPAK-3

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    BB143 BB143115

NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
Part No. BB143 BB143115
OCR Text ...on temperature in series with a 10 k resistor CONDITIONS - - - -55 -55 MIN. 6 8 20 +150 +150 MAX. V V mA C C UNIT ELECTRICAL CHARACTERIST...943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon To...
Description 5.3 pF, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode

File Size 45.87K  /  8 Page

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    BF240

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BF240
OCR Text ...= 0; VEB = 4 V IC = 1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 0; VCB = 10 V; f = 1 MHz IC = 1 mA; VCE = 10 V; f = 100 MHz MIN. - - - 67 67...943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon To...
Description NPN medium frequency transistor

File Size 43.60K  /  8 Page

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