10.2-25.4 pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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10.2-25.4 Datasheet PDF File

For 10.2-25.4 Found Datasheets File :: 490091 Search Time::4.031ms
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				http:// PANASONIC[Panasonic Semiconductor]
Part No.	2SB790 2SD969
OCR Text	...20 -7 90 25 - 0.4 -1.2 220 4.10.2 4.50.1 7 Unit nA A V V V V V MHz VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 25 pF Pulse measurement *1h FE1 Rank classification Q 90 ~ 155 R 130 ~ 22...
Description	Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type)
File Size	36.83K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] http://
Part No.	2SB791 2SB791K
OCR Text	... -- 0.5 1.6 1.5 Max -- -- -100 -10 20000 -1.5 -3.0 -2.0 -3.5 -- -- -- V V V V s s s Unit V V A A Test conditions I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -120 V, IE = 0 VCE = -100 V, RBE = VCE = -3 V, IC = -4 A*1 I C = -4 A, IB = -8...
Description	Silicon PNP Epitaxial
File Size	36.18K / 6 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB792 2SB792A 2SD814 2SA1310 2SB0792A
OCR Text	...160 -70 -60 -50 -40 -30 -20 -10 120 Collector current IC (mA) -12 -80 -60 80 -2mA -40 40 -1mA -20 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient tempe...
Description	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
File Size	36.47K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB831
OCR Text	...V V A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -20 V, IE = 0 VCE = -1 V, IC = -0.15 A2 I C = -0.5 A, IB = -0.05 A2 VCE = -1 V, IC = -0.15 A*2 VCE(sat) VBE V V Notes: 1. The 2SB831 is gr...
Description	Silicon PNP Epitaxial
File Size	24.11K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB857 2SB858
OCR Text	... V V V A Test conditions I C = -10 A, IE = 0 I C = -50 mA, RBE = I E = -10 A, IC = 0 VCB = -50 V, IE = 0 VCE = -4 V I C = -1 A2 I C = -0.1 A2 Min -70 -50 -5 -- 60 35 -- -- -- Typ -- -- -- -- -- -- -- -- 15 DC current transfer ra...
Description	Silicon PNP Transistor Silicon PNP Triple Diffused
File Size	31.80K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB859
OCR Text	...ons I C = -50 mA, RBE = I E = -10 A, IC = 0 VCB = -80 V, IE = 0 VCE = -5 V, IC = -1 A2 VCE = -5 V, IC = -0.1 A2 VCE = -5 V, IC = -1 A2 I C = -2 A, IB = -0.2 A2 VCE = -5 V, IC = -0.5 A*2 VCB = -20 V, IE = 0, f = 1 MHz Collector to em...
Description	Silicon PNP Transistor Silicon PNP Triple Diffused
File Size	31.50K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB860
OCR Text	... V A A V Test conditions I C = -10 mA, RBE = I E = -1 mA, IC = 0 VCE = -80 V, RBE = VEB = -3.5 V, IC = 0 I C = -1 A, IB = -0.1 A*1 VCE = -...2 2SB860 Typical Output Characteristics -1.0 TC = 25C 1,000 DC Current Transfer Ratio vs. Collec...
Description	Silicon PNP Triple Diffused
File Size	30.36K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB861
OCR Text	... VCE = -4 V, IC = -50 mA VCE = -10 V, IC = -500 mA2 Collector to emitter breakdown V(BR)CBO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1 hFE2 Collector to emitter satu...
Description	Silicon PNP Triple Diffused
File Size	30.83K / 5 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB929 2SB929A 2SD1252A 2SD1252
OCR Text	10.00.3 1.50.1 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 For power amplification Complementary to 2SD1252 and 2SD1252A s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emit...
Description	Silicon PNP epitaxial planar type(For power amplification)
File Size	48.48K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB930 2SB930A 2SD1253A 2SD1253
OCR Text	10.00.3 1.50.1 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 For power amplification Complementary to 2SD1253 and 2SD1253A s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emit...
Description	Silicon PNP epitaxial planar type(For power amplification)
File Size	48.02K / 2 Page	View it Online	Download Datasheet

For 10.2-25.4 Found Datasheets File :: 490091 Search Time::4.031ms
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