1.2ghz pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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1.2ghz Datasheet PDF File

For 1.2ghz Found Datasheets File :: 323 Search Time::1.891ms
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				Electronic Theatre Controls, Inc.
Part No.	EPB025A
OCR Text	... and 11.0db associated gain at 12ghz 0.3 x 250 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial doping profile provides super low noise, high gain and high reliability idss sorted in 5ma per bin ...
Description	Low Noise High Gain Heterojunction FET
File Size	19.84K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA030C-70
OCR Text	...1db compression f = 12ghz v ds = 6v, i ds 50% i dss f = 18ghz 22.0 dbm 9.5 11.5 g 1db gain at 1db compression f = 12ghz v ds = 6v, i ds 50% i dss ...
Description	High Efficiency Heterojunction Power FET
File Size	77.63K / 1 Page	View it Online	Download Datasheet

				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	SGF9
OCR Text	...G Conditions VDS=3V, ID=10mA, f=12GHz VDS=3V, ID=10mA, f=12GHz VDS=3V, ID=10mA, f=12GHz Ratings min typ 2.5 5.0 7.0 max Unit dB dB dB S-Parameter SGF9 FREQUENCY MHz 1000.0000 2000.0000 3000.0000 4000.0000 5000.0000 6000.0000 7000.0000 8...
Description	For C to X-band Local Oscillator and Amplifier
File Size	65.47K / 8 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	TC1101
OCR Text	... at VDS = 2 V, IDS = 10 mA, f = 12GHz Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz Output Power at 1dB Gain Compression Point , f = 12GHz VDS = 4 V, IDS = 25 mA Linear Power Gain, f = 12GHz VDS = 4 V, IDS = 25 mA Saturated Drain-Sou...
Description	Low Noise and Medium Power GaAs FETs
File Size	149.21K / 6 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA040A-70
OCR Text	...ssion ? 7.0 db power gain at 12ghz ? 0.3 x 800 micron recessed ?mushroom? gate ? si 3 n 4 passivation ? advanced epitaxial heterojunction profile provices extra high power efficiency and high reliability electric...
Description	High Efficiency Heterojunction Power FET
File Size	80.69K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] TRANSCOM
Part No.	TC2201
OCR Text	... at VDS = 4 V, IDS = 25 mA, f = 12GHz Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 6 V, IDS = 40 mA Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 40 mA Saturated Drain-Sour...
Description	Plastic Packaged Low Noise PHEMT GaAs FETs
File Size	130.71K / 4 Page	View it Online	Download Datasheet

				United Monolithic Semiconductors
Part No.	CHC3014
OCR Text	...g precautions! chc3014 8-12ghz rx-tx core chip ref. : dschc30149043 - 12 feb 09 2/16 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 ...
Description	X-band RX-TX Core Chip GaAs Monolithic Microwave IC
File Size	1,084.28K / 16 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Excelics Semiconductor, Inc. Electronic Theatre Controls, Inc.
Part No.	EPA080A-70
OCR Text	...WER 7.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY 20 D S S 40 G All Dimen...
Description	5-8V high efficiency heterojunction power FET
File Size	18.70K / 2 Page	View it Online	Download Datasheet

				Execelies
Part No.	EFA080A
OCR Text	... 10.0db typical power gain at 12ghz 0.3 x 800 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial doping profile provides high power efficiency, linearity and reliability idss sorted...
Description	Low Distortion GaAs Power FET
File Size	149.59K / 2 Page	View it Online	Download Datasheet

For 1.2ghz Found Datasheets File :: 323 Search Time::1.891ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |