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    ST Microelectronics
Part No. STD9N10
OCR Text 0.23 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low gate charge n high current capab...023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 1...
Description OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

File Size 383.32K  /  10 Page

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    STU26NM60 STU26NM60I

STMICROELECTRONICS
Integrated Device Technology, Inc.
SGS Thomson Microelectronics
Part No. STU26NM60 STU26NM60I
OCR Text 0.125 w - 26a to-247,max220,max220i zener-protected mdmesh ? power mosfet n typical r ds (on) = 0.125 w n high dv/dt and avalanche capabili...023 d 15.9 16.3 0.626 0.641 d1 9 9.35 0.354 0.368 d2 0.8 1.2 0.031 0.047 d3 2.8 3.2 0.110 0.126 e 2....
Description 26 A, 600 V, 0.135 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 26A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 600V的五(巴西)直|6A条(丁)|20VAR
N-CHANNEL 600V 0.125 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET

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    ST Microelectronics
Part No. STTH312
OCR Text ...uation: p = 1.4 x i f(av) + 0.1 i f 2 (rms) table 1. absolute ratings (limiting values at 25 c, unless otherwise specified) symbol para...023 c2 0.48 0.60 0.018 0.023 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.251 0.259 g 4.40 4.60 0.173 0.181...
Description Ultrafast recovery Diode

File Size 114.87K  /  8 Page

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    ST Microelectronics
Part No. STPS15H100CB
OCR Text ...e forward current tc = 135c d = 0.5 per diode 7.5 a per device 15 i fsm surge non repetitive forward current tp = 10 ms sinusoidal 75 a i rr...023 c2 0.48 0.60 0.018 0.023 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.251 0.259 g 4.40 4.60 0.173 0.181...
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

File Size 61.82K  /  4 Page

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    STMicroelectronics N.V.
Part No. STD35NF3LLT4
OCR Text 0.014 w - 35a ipak/dpak stripfet ? ii power mosfet n typical r ds (on) = 0.016 w @ 4.5v n optimal r ds (on) x qg trade-off @ 4.5v n conduc...023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 1...
Description TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 35A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 30V的五(巴西)直| 35A条(丁)|52AA

File Size 92.83K  /  8 Page

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    STPS15H100C-Y STPS15H100CBY-TR

ST Microelectronics
STMicroelectronics
Part No. STPS15H100C-Y STPS15H100CBY-TR
OCR Text ... 100 v t j (max) 175 c v f(max) 0.67 v stps15h100cby-tr dpak www.st.com characteristics stps15h100c-y 2/7 doc id 17686 rev 1 1 characteris...023 c2 0.48 0.60 0.018 0.023 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.251 0.259 g 4.40 4.60 0.173 0.181...
Description Automotive power Schottky rectifier
Automotive high voltage power Schottky rectifier

File Size 182.48K  /  7 Page

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    ST Microelectronics
Part No. STD16NE06 STD16NE06-1 STD16NE06T4
OCR Text 0.07 w - 16a dpak/ipak stripfet ? power mosfet n typical r ds(on) = 0.07 w n exceptional dv/dt capability n 100% avalanche tested n ...023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 1...
Description N-CHANNEL 60V - 0.07 OHM - 16A DPAK/IPAK STRIPFET POWER MOSFET
N-CHANNEL 60V - 0.07 OHM - 16A DPAK/IPAK STRIPFET POWER MOSFET

File Size 270.10K  /  9 Page

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    MCR706A

ON Semiconductor
Part No. MCR706A
OCR Text ...mcr706a1 ? epoxy meets ul 94, v?0 @ 0.125 in ? esd ratings: human body model, 3b 8000 v machine model, c 400 v scrs 4.0 amperes rms ...023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.4...
Description Silicon Controlled Rectifier

File Size 72.95K  /  8 Page

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    ST Microelectronics
Part No. STD40NF3LL
OCR Text 0.0095 w - 40a dpak low gate charge stripfet ? power mosfet preliminary data n typical r ds(on) = 0.0115 w @ 4.5v n optimal r ds(on) xq ...023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 1...
Description N-CHANNEL 30V - 0.0095 OHM - 40A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET

File Size 45.34K  /  6 Page

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    ST Microelectronics
Part No. STD40NF3LLT4
OCR Text 0.009 w - 40a dpak low gate charge stripfet?ii power mosfet n typical r ds (on) = 0.009 w @ 10v n optimal r ds(on) x qg trade-off n con...023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 1...
Description N-CHANNEL 30V - 0.009 OHM - 40A DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET

File Size 567.44K  /  9 Page

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