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0.0147 Datasheet PDF File

For 0.0147 Found Datasheets File :: 1706 Search Time::8.829ms
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				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PSMN004-36P PSMN004-36B PSMN004_36P_36B-01
OCR Text	...inductive load; ID = 75 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 ; VGS = 5V; starting Tj = 25 C; unclamped inductive load; VDD = 15 V; RGS = 50 ; VGS = 5V; starting Tj = 25 C tp 50 s; pulsed; duty cycle 25 %; Tj 150 C Tmb = 25 C; VGS = 5 V; F...
Description	N-channel enhancement mode field-effect transistor 75 A, 36 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system
File Size	99.66K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PSMN004-60P PSMN004-60B PSMN004_60P_60B-01 PSMN004-60P127
OCR Text	...inductive load; ID = 75 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C unclamped inductive load; VDD = 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C tp 50 s; pulsed; duty cycle 25%; Tj 150 C Tmb = 25 C; VGS = 10 V...
Description	75 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, SC-46, 3 PIN From old datasheet system N-channel enhancement mode field-effect transistor
File Size	99.12K / 13 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	PSMN005-25D
OCR Text	...ate resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55C VDS = VGS; ID = 1 mA Tj = 175C Tj = -55C VGS = 10 V; ID = 25 A VGS = 5 V; ID = 25 A VGS = 5 V; ID = 25 A; Tj = 175C Gate source leakage current VGS = 10 V; VDS = 0 V Zero gate vol...
Description	N-channel logic level TrenchMOS transistor
File Size	98.39K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PSMN005-75P PSMN005-75B PSMN005_75P_75B-01
OCR Text	...5 C Typ 4.3 Max 75 75 230 175 5.0 Unit V A W C m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In ...
Description	N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system N-channel enhancement mode field-effect transistor
File Size	93.43K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PSMN008-75P PSMN008-75B
OCR Text	...inductive load; ID = 75 A; tp = 0.1 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C; Figure 4 unclamped inductive load; VDD 15 V; RGS = 50 ; VGS = 10 V; Figure 4 - 360 mJ IAS non-repetitive avalanche current - 75 A ...
Description	N-channel enhancement mode field-effect transistor 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	127.13K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PSMN030-150B PSMN030-150B_1
OCR Text	...um footprint, FR4 board 50 MAX. 0.6 UNIT K/W K/W ELECTRICAL CHARACTERISTICS Tj= 25C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ls Ciss Coss Crss Drain-source brea...
Description	From old datasheet system N-channel TrenchMOS transistor N-channel TrenchMOS(tm) transistor
File Size	98.27K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PSMN030-150P PSMN030-150P_1
OCR Text	...78 package, in free air 60 MAX. 0.6 UNIT K/W K/W ELECTRICAL CHARACTERISTICS Tj= 25C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls Ciss Coss Crss Drain-source b...
Description	From old datasheet system N-channel TrenchMOS transistor N-channel TrenchMOS(tm) transistor
File Size	93.28K / 8 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	PSMN057-200P PSMN057-200P_1
OCR Text	...ITIONS TYP. in free air 60 MAX. 0.6 UNIT K/W K/W ELECTRICAL CHARACTERISTICS Tj= 25C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls Ciss Coss Crss Drain-source b...
Description	N-channel TrenchMOS(tm) transistor From old datasheet system N-channel TrenchMOS transistor
File Size	88.13K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PSMN063-150D PSMN063-150 PSMN063_150D-03
OCR Text	...inductive load; ID = 26 A; tp = 0.2 ms; VDD 25 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C unclamped inductive load; VDD 25 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 Conditio...
Description	From old datasheet system N-channel TrenchMOS transistor N-channel enhancement mode field-effect transistor
File Size	105.98K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PSMN085-150K PSMN085_150K-01
OCR Text	... 60 40 40 20 20 0 0 25 50 75 100 125 Tsp 0 150 (oC) 175 0 25 50 75 100 125 150 175 Tsp (oC) P tot P der = ---------------------- x 100% P tot ( 25 C ) VGS 5 V ID I der = ------------------ x 100% I D ( 25 C ) ...
Description	N-channel enhancement mode field-effect transistor From old datasheet system
File Size	96.84K / 13 Page	View it Online	Download Datasheet

For 0.0147 Found Datasheets File :: 1706 Search Time::8.829ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |