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  0-20v Datasheet PDF File

For 0-20v Found Datasheets File :: 54005    Search Time::6.047ms    
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    TI store
Part No. LM108AJAN LM108AJAN-SP LM108AJAN-13
OCR Text ...maximum input bias current of 3.0 na over specifications a factor of ten better than fet temperature amplifiers over a ? 55 c to +125 c te...20v and have sufficient supply rejection to use saturation unregulated supplies. although the circui...
Description <font color=red>[Old version datasheet]</font> Operational Amplifiers

File Size 377.99K  /  13 Page

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ...unction-to-Ambient Typ. --- 0.50 --- Max. 0.45 --- 62 Units C/W www.irf.com 1 08/07/02 IRF2204 Electrical Characteris...20V nA -200 VGS = -20V 200 ID = 130A 52 nC VDS = 32V 59 VGS = 10V --- VDD = 20V --- ID = 130A ns ---...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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    FS5VS-6

Renesas Electronics Corporation
Part No. FS5VS-6
OCR Text ...1.3 10.5MAX. 1.5MAX. 8.6 0.3 9.8 0.5 3.0 +0.3 -0.5 0 +0.3 -0 1 5 0.8 0.5 qwe wr 2.6 0.4 q VDSS ...............20V 10V 6V PD= 60W 5.5V CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD...
Description MITSUBISHI Nch POWER MOSFET

File Size 79.10K  /  5 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 ...20V (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 13.9A 8.8A 56A 75W 0.6W/C 450mJ 5.0V/ns -55 to ...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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    FS5VS-10

Renesas Electronics Corporation
Part No. FS5VS-10
OCR Text ...1.3 10.5MAX. 1.5MAX. 8.6 0.3 9.8 0.5 3.0 +0.3 -0.5 0 +0.3 -0 1 5 0.8 0.5 qwe wr 2.6 0.4 q VDSS ...............20V 10V 8V TC = 25C Pulse Test DRAIN CURRENT ID (A) 8 PD = 90W VGS = 20V 10V 8V tw=10s 100s 1ms 10ms...
Description MITSUBISHI Nch POWER MOSFET

File Size 78.54K  /  5 Page

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 ...20V (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 22A 14A 88A 100W 0.8W/C 500mJ 5.0V/ns -55 to 15...
Description N.CHANNEL POWER MOSFET

File Size 23.37K  /  2 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ... j Parameter Typ. --- 0.50 Max. 0.50 --- 62 40 Units C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient j ...20V VGS = -20V ID = 160A VDS = 32V VGS = 10V VDD = 20V ID = 160A RG = 2.6 VGS = 10V V/C Reference...
Description AUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text ...nt, steady state)j Typ. --- 0.50 --- --- Max. 0.45 --- 62 40 Units C/W HEXFET(R) is a registered trademark of International R...20V VGS = -20V ID = 75A VDS = 32V VGS = 10V VDD = 20V ID = 75A RG = 2.5 VGS = 10V f f D G S B...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 273.77K  /  12 Page

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    FS50KM-2-A8

Renesas Electronics Corporation
Part No. FS50KM-2-A8
OCR Text ... 55 to +150 - 55 to +150 2000 2.0 Unit V V A A A A A W C C V g Conditions VGS = 0 V VDS = 0 V L = 50 H AC for 1 minute, Terminal to ca...20V 10V 7V Output Characteristics (Typical) 50 VGS = 20V 10V 7V 6V Tc = 25C Pulse Test Dr...
Description High-Speed Switching Use Nch Power MOS FET

File Size 167.99K  /  7 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ...nt)** Typ. --- --- Max. 0.65 40 Units C/W www.irf.com 1 02/14/02 IRF2807S/IRF2807L Electrical Characteristics @ TJ = ...20V nA -100 VGS = -20V 160 ID = 43A 29 nC VDS = 60V 55 VGS = 10V, See Fig. 6 and 13 --- VDD = 38V --...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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For 0-20v Found Datasheets File :: 54005    Search Time::6.047ms    
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