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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 package is universally preferred for all commercial-industrial applications at power dissipation...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 90.69K  /  8 Page

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    IRF36 IRF-36

VISAY[Vishay Siliconix]
Part No. IRF36 IRF-36
OCR Text ...ch allows for inductance values to 1000H. * Axial lead type, small lightweight design. * Special magnetic core structure contributes to high...220 270 330 390 470 560 680 820 1000 TOL. 5%, 10% 5%, 10% 5%, 10% 5%, 10% 5%, 10% 5%, ...
Description Inductors Epoxy Conformal Coated, Axial Leaded

File Size 113.79K  /  1 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ...Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated VDSS 30V RDS(on) max 2.8m ID 210A TO-220AB...220 AB . 4 HE A TS IN K & LE A D M E AS U R E ME NT S D O NO T IN CL U DE B U R R S . TO-220AB Pa...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. IRF3706 IRF3706L IRF3706S
OCR Text ...valanche Voltage and Current TO-220AB IRF3706 D2Pak IRF3706S TO-262 IRF3706L Absolute Maximum Ratings Symbol VDS VGS ID @ TC I...220 28 Units mJ A Diode Characteristics Symbol IS I SM Parameter Continuous Source Curr...
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)

File Size 143.52K  /  11 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 package is universally preferred for all commercial-industrial applications at power dissipation...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...DS(on) max 6.0m ID 110A TO-220AB IRF3711 D2Pak IRF3711S TO-262 IRF3711L Parameter Drain-Source Voltage Gate-to-Source Volt...220 17 12 2980 1770 280 Max. Units Conditions --- S VDS = 16V, ID = 30A 44 ID = 15A --- nC VDS = 10V...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...Repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 3.3m Description Specifically designed for Automotive applications, ...220 160 75 890 130 2.2 20 TO-262 IRF3805L Units A Absolute Maximum Ratings Parameter ID @ ...
Description AUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ...Repetitive Avalanche Allowed up to Tjmax Benefits q q q q q q VDSS = 75V G S RDS(on) = 0.007 ID = 106AV Description Designed ...220 ID = 82A 47 nC VDS = 60V 76 VGS = 10VT --- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V ...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...Repetitive Avalanche Allowed up to Tjmax Benefits q q q q q q VDSS = 75V G S RDS(on) = 0.007 ID = 140AV Description Designed ...220 ID = 82A 47 nC VDS = 60V 76 VGS = 10VT --- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V ...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 package is universally preferred for all commercial-industrial applications at power dissipation...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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