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				Sanyo Semicon Device
Part No.	MCH3309
OCR Text	...0 --25 --1.5 C 25 Ta= 7 C --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --2.0 --2.5 IT...8A 300 300 ID= --0.4A 200 200 V --2.5 S= A, VG --0.4 V I D= = --4.0 , V GS --0.8A I D=...
Description	Ultrahigh-Speed Switching Applications
File Size	27.14K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	MCH3310
OCR Text	...S=--1.5A, VGS=0 Ratings min typ 7 4 22 8 4.7 0.8 0.7 --0.89 --1.5 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VDD= --15V VIN 0V --10V VIN PW=10s D.C.1% ID= --0.8A RL=18.7 D VOUT G P.G 50 MCH3310 S ...
Description	P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	27.25K / 4 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	C3743
OCR Text	...c t j t stg ratings 900 900 800 7 5 3 1 40 2 150 C55 to +150 unit v v v v a a a w ?c ?c t c =25 c t a=25 c 2sc3743 silicon npn tr iple dif...8a i c = 0.8a, i b = 0.16a i c = 0.8a, i b = 0.16a v ce = 5v , i c = 0.1a, f = 1mhz i c = 0.8...
Description	2SC3743
File Size	118.23K / 3 Page	View it Online	Download Datasheet

				HOSIDEN CORP
Part No.	TCS4480-01-4151
OCR Text	7 10 18 19.5 3.5 11.8 13.9 21.2 19 2 front of socket tcs5089 series 1 ee 6 2 4 53 8 7 12.5 5 5 10 15 15 17.5 10 19.5 20 13.9 11.8 7 18 ...8a 8b __ 45327 5c 45 41 2 4 5 0.9 13 78 6 45 2 45 0.7 1 67 3 8 45 2 45 1 67 3 60 34 2 1 5 6 45 ...
Description	8 CONTACT(S), BOARD MOUNT, DIN CONNECTOR, SOCKET
File Size	59.75K / 1 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electron...
Part No.	AP2430GN3-HF AP2430GN3-HF-14
OCR Text	...stance 2 v gs =10v, i d =8a - 9.7 12 m v gs =4.5v, i d =6a - 14.4 18 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.4 3 v g fs forward transconductance v ds =10v, i d =8a - 15 - s i dss drain-source leakage current v ds =2...
Description	Bottom Exposed DFN, Low On-resistance
File Size	96.55K / 4 Page	View it Online	Download Datasheet

				SavantIC
Part No.	C3461
OCR Text	...base voltage open collector 7 v i c collector current 8 a i cm collector current-peak 25 a i b base current 4 a...8a 2.0 v v besat base-emitter saturation voltage i c =4a; i b =0.8a 1.5 v i cbo collector ...
Description	2SC3461
File Size	257.87K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IDP08E65D2
OCR Text	...5mm (0.197 in.) from case l e - 7.0 - nh 1) please be aware that in non standard load conditions, due to high rth(j-c), tvj close to tvjmax...8a t j =175c, i f = 8a figure 4. typicalreverserecoverychargeasafunction ofdiodecurrentslo...
Description	High Power RF LDMOS FETs Qualified according to JEDEC for target applications
File Size	1,703.79K / 10 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZXM64N02X ZXM64N02XTA ZXM64N02XTC
OCR Text	... ZXM64N02XTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12mm embossed 12mm embossed QUANTITY PER REEL 1000 units 4000 units S G 3 DEVI...8A, V GS=0V T j=25C, I F=3.8A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 5.7 9.6 28.3 11.6 1...
Description	N-channel MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	179.82K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IDP08E65D1
OCR Text	...5mm (0.197 in.) from case l e - 7.0 - nh 1) please be aware that in non standard load conditions, due to high rth(j-c), tvj close to tvjmax...8a t j =125c, i f = 8a t j =175c, i f = 8a a c c a c 7 idp08e65d1 emittercontrolleddio...
Description	High Power RF LDMOS FETs Temperature stable behaviour of key parameters
File Size	1,759.32K / 11 Page	View it Online	Download Datasheet

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