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HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
IRF234 IRF235 IRF236 IRF237
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| OCR Text |
...
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow prop...7V 9
6 VGS = 6V 3 VGS = 4V 0 0 25 50 75 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 125 VGS = 5V
IRF2... |
| Description |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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| File Size |
68.51K /
7 Page |
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IRF[International Rectifier]
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| Part No. |
IRF3706 IRF3706L IRF3706S
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| OCR Text |
...S = 4.5V, ID = 28A 11 22 VGS = 2.8V, ID = 18A --- 2.0 V VDS = VGS, ID = 250A --- 20 VDS = 16V, VGS = 0V A --- 100 VDS = 16V, VGS = 0V, TJ ...7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
1000
I D , Drain-to-Source Current (A)
100
I D , ... |
| Description |
Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)
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| File Size |
143.52K /
11 Page |
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it Online |
Download Datasheet |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
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| OCR Text |
...0A ns --- 21 --- RG = 1.8 --- 9.2 --- VGS = 4.5V --- 2672 --- VGS = 0V --- 1064 --- pF VDS = 16V --- 109 --- = 1.0MHz
Avalanche Charact...7V TOP
1000
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
2.7V
2.7V
1... |
| Description |
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
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| File Size |
120.60K /
11 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRF3711 IRF3711L IRF3711S
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| OCR Text |
...eakage --- Typ. --- 0.022 4.7 6.2 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, I D = 250A --- V/C Reference to 25C, ID = 1mA 6....7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
1000
I D , Drain-to-Source Current (A)
I D , Drain-to-Sou... |
| Description |
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
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| File Size |
243.87K /
11 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
IRF9520 FN2281
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| OCR Text |
..., VGS = 0V TC = 125oC MIN -100 -2 -6 0.9 VGS = -10V, ID = -6A, VDS = 0.8 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of...7V
1
10ms 100ms DC
-4
VGS = -6V -2
TC = 25oC TJ = MAX RATED 0.1 1 10 VDS, DRAIN TO SO... |
| Description |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
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| File Size |
57.36K /
7 Page |
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it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
IRF9540 RF1S9540SM FN2282
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| OCR Text |
...nt On-State Drain Current (Note 2) Gate to Source Leakage Current
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) ...7V VGS = -6V -30 VGS = -4V -40 -50
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIA... |
| Description |
19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system
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| File Size |
59.17K /
7 Page |
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it Online |
Download Datasheet |
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