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    P8TG-1205Z21LF P8TG-123R3Z21LF P8TG-1209Z21LF P8TG-1212Z21LF P8TG-1215Z21LF P8TG-1224Z21LF

PEAK electronics GmbH
Part No. P8TG-1205Z21LF P8TG-123R3Z21LF P8TG-1209Z21LF P8TG-1212Z21LF P8TG-1215Z21LF P8TG-1224Z21LF
OCR Text ...n can change without a notice ? we acce pt no liability for any inaccuracy or printing erro rs. page 1/3 p8tg-xxxxe/z2:1(h35)lf all specifications typical at ta=25c, nominal inpu t voltage and full load unless otherw...
Description PM6-SERIES

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    K6T1008C2E-TF70T00

Samsung semiconductor
Part No. K6T1008C2E-TF70T00
OCR Text ...ct input oe output enable input we write enable input i/o 1 ~i/o 8 data inputs/outputs a 0 ~a 16 address inputs vcc power vss ground nc no connection product family 1. the parameters are tested with 50pf test load product family operating t...
Description 128Kx8 bit Low Power CMOS Static RAM

File Size 189.98K  /  10 Page

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    Thomas
Part No. D86-48-D D86-48-A D86-6-D D86-24-A D86-36-A D86-0-D D86-42-D D86-6-A D86-18-D D86-18-A D86-12-D D86-12-A D86-24-D D86-54-D D86-60-D
OCR Text ...ferential Output D86-60-D We hope the information given here will be helpful. The information is based on data and our best knowledge, and we consider the information to be true and accurate. Please read all statements, recommendation...
Description Amplifier. Other 放大器。其

File Size 154.69K  /  2 Page

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    Cypress Semiconductor, Corp.
Everlight Electronics Co., Ltd.
Pyramid Semiconductor, Corp.
YEONHO Electronics Co., Ltd.
Part No. CYM1841APR-20C CYM1841BPZ-25C CYM1841APY-20C CYM1841APY-25C CYM1841APT-25C CYM1841APZ-25C CYM1841AP6-25C CYM1841APR-25C CYM1841BP7-20C CYM1841AP8-15C CYM1841AP8-35C CYM1841AP7-20C CYM1841AP8-45C CYM1841AP5-20C CYM1841APN-45C CYM1841APN-25C CYM1841APR-15C CYM1841APT-15C CYM1841APT-45C CYM1841APY-45C CYM1841CPM-12C CYM1841APY-35C CYM1841APR-45C CYM1841APZ-35C
OCR Text ...p Select (CS) and Write Enable (WE) inputs are both LOW. Data on the Input/Output pins (I/O) is written into the memory location specified on the address pins (A0 through A17). Reading the device is accomplished by taking the Chip Select (C...
Description x32 SRAM Module X32号的SRAM模块
256K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PSMA72 PLASTIC, SIMM-72
256K X 32 MULTI DEVICE SRAM MODULE, 35 ns, PSMA72 PLASTIC, SIMM-72
256K X 32 MULTI DEVICE SRAM MODULE, 20 ns, PSMA72 PLASTIC, SIMM-72
256K X 32 MULTI DEVICE SRAM MODULE, 45 ns, PSMA72 PLASTIC, SIMM-72
256K X 32 MULTI DEVICE SRAM MODULE, 45 ns, PSMA64 PLASTIC, SIMM-64
256K X 32 MULTI DEVICE SRAM MODULE, 25 ns, PSMA64 PLASTIC, SIMM-64
256K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PZMA64 PLASTIC, ZIP-64

File Size 199.79K  /  14 Page

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    CY62256V CY62256V-55RZC CY62256V-55SNC CY62256V-55ZC CY62256V-70RZC CY62256V-70SNC CY62256V-70ZC CY62256VL-55RZC CY62256

Cypress Semiconductor
Part No. CY62256V CY62256V-55RZC CY62256V-55SNC CY62256V-55ZC CY62256V-70RZC CY62256V-70SNC CY62256V-70ZC CY62256VL-55RZC CY62256VL-55SNC CY62256VL-55ZC CY62256VL-70RZC CY62256VL-70SNC CY62256VL-70ZC CY62256VLL-55RZC CY62256VLL-55SNC CY62256VLL-55ZC CY62256VLL-70RZC CY62256VLL-70SNC CY62256VLL-70ZC
OCR Text ...active LOW write enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the ...
Description 32K x 8 Static RAM

File Size 315.64K  /  10 Page

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    CY62256 CY62256-55 CY62256-55PC CY62256-55SNC CY62256-55ZC CY62256-55ZRC CY62256-70 CY62256-70PC CY62256-70SNC CY62256-7

Cypress Semiconductor
Part No. CY62256 CY62256-55 CY62256-55PC CY62256-55SNC CY62256-55ZC CY62256-55ZRC CY62256-70 CY62256-70PC CY62256-70SNC CY62256-70SNI CY62256-70ZC CY62256-70ZI CY62256-70ZRC CY62256L-55SNC CY62256L-55ZC CY62256L-55ZRC CY62256L-70PC CY62256L-70SNC CY62256L-70SNI CY62256L-70ZC CY62256L-70ZI CY62256L-70ZRC CY62256LL-55SNC CY62256LL-55ZC CY62256LL-55ZRC CY62256LL-70PC CY62256LL-70SNC CY62256LL-70SNI CY62256LL-70ZC CY62256LL-70ZI CY62256LL-70ZRC
OCR Text ...active LOW write enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the ...
Description 256K (32K x 8) Static RAM
32K X 8 Static RAM, 70ns, Ll-power

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    CY7C1021 CY7C1021-10 CY7C1021-10VC CY7C1021-10ZC CY7C1021-12 CY7C1021-12VC CY7C1021-12VI CY7C1021-12ZC CY7C1021-15 CY7C1

CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Part No. CY7C1021 CY7C1021-10 CY7C1021-10VC CY7C1021-10ZC CY7C1021-12 CY7C1021-12VC CY7C1021-12VI CY7C1021-12ZC CY7C1021-15 CY7C1021-15VC CY7C1021-15VI CY7C1021-15ZC CY7C1021-15ZI CY7C1021-20 CY7C1021-20VC CY7C1021-20ZC CY7C1021L-10ZC CY7C1021L-15ZC
OCR Text ...while forcing the write enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW, then data from memory will appear on ...
Description Memory : Async SRAMs
64K x 16 Static RAM
JUMPER CROSS FOR TERMINAL BLOCK
MX Leveling Mechanism Kit, 1x2 / 1x2.25 / 1x 2.75 For use with PCB Mounted Keyswitches
MARKING TAG PRINTED 5MM 10PC
MX Leveling Mechanism Kit, 1x8 For use with PCB Mounted Keyswitches

File Size 180.94K  /  9 Page

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    NEC Corp.
NEC, Corp.
Part No. UPD29F064115GZ-DB80X-MJH UPD29F064115GZ-DB85X-MJH UPD29F064115GZ-MJH UPD29F064115GZ-EB85X-MJH UPD29F064115F9-EB85X-CD6 UPD29F064115F9-DB85X-CD5 UPD29F064115F9-EB85X-CD5 UPD29F064115F9-DB80X-CD5 UPD29F064115F9-EB90X-CD5 UPD29F064115F9-DB80X-CD6 UPD29F064115F9-DB85X-CD6 UPD29F064115F9-EB90X-CD6 UPD29F064115F9-CD5 UPD29F064115F9-CD6
OCR Text ... A13 A12 A11 A10 A9 A8 A19 A20 /WE /RESET A21 /WP (ACC) RY (/BY) A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 VCCQ GN...
Description Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:150VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:22000uF RoHS Compliant: Yes
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:75VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:22000uF RoHS Compliant: Yes
CONNECTOR ACCESSORY
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:75VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:22000uF RoHS Compliant: Yes 6400CMOS低电压双堆叠式存储器分词6位(字模式)页面模式
64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE 6400位CMOS低电压双堆叠式存储器分词6位(字模式)页面模式
4M X 16 FLASH 1.8V PROM, 80 ns, PBGA63

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    EDS2504ACTA EDS2504ACTA-75 EDS2504ACTA-7A EDS2504APTA-75 EDS2504APTA-75L EDS2504APTA-7A EDS2504APTA-7AL EDS2508ACTA EDS2

ELPIDA[Elpida Memory]
Part No. EDS2504ACTA EDS2504ACTA-75 EDS2504ACTA-7A EDS2504APTA-75 EDS2504APTA-75L EDS2504APTA-7A EDS2504APTA-7AL EDS2508ACTA EDS2508ACTA-75 EDS2508ACTA-7A EDS2508APTA EDS2508APTA-75 EDS2508APTA-75L EDS2508APTA-7A EDS2508APTA-7AL EDS2516ACTA EDS2516ACTA-75 EDS2516ACTA-7A EDS2516APTA EDS2516APTA-75 EDS2516APTA-75L EDS2516APTA-7A EDS2516APTA-7AL
OCR Text ...NC DQ2 NC NC DQ1 DQ3 NC VDD NC /WE /CAS /RAS /CS BA0 BA1 A10 A0 A1 A2 A3 VDD VDD DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 Index EDS2504AP/08AP/16AP 54-pin TSOP 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VDDQ VDD...
Description 256M bits SDRAM

File Size 544.49K  /  51 Page

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