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IRF[International Rectifier]
http://
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| Part No. |
IRHG8214 2071 IRHG3214 IRHG4214 IRHG7214 IRHG8214N IRHG7214N
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| OCR Text |
...ation Level IRHG7214 100K Rads (Si) IRHG3214 300K Rads (Si) IRHG4214 600K Rads (Si) IRHG8214 1000K Rads (Si) R DS(on) 2.25 2.25 2.25 2.25
...gate charge reduces the power losses in switching applications such as DC to DC converters and motor... |
| Description |
250V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
0.5 A, 250 V, 2.4 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB
250V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
250V Quad N-Channel MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET THRU-HOLE
From old datasheet system
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| File Size |
240.74K /
8 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRK254H FRK254R FRK254D FN3231
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| OCR Text |
...e-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) ...gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed ... |
| Description |
20A/ 250V/ 0.170 Ohm/ Rad Hard/ N-Channel Power MOSFETs
20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
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| File Size |
47.78K /
6 Page |
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HIROSE ELECTRIC Co., Ltd.
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| Part No. |
IRHQ3214
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| OCR Text |
...d irhq7214 100k rads (si) 2.25 ? 1.6a irhq3214 300k rads (si) 2.25 ? 1.6a irhq4214 600k rads (si) ...gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 0.9 ? ?... |
| Description |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | LLCC 晶体管| MOSFET的|阵| N沟道| 250V五（巴西）直| 1.6AI（四）| LLCC
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| File Size |
125.92K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRHF7130 JANSH2N7261 IRHF8130 JANSR2N7261
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| OCR Text |
...ion doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier's RAD HARD HEXFETs r...gate drive circuitry is required. These devices are also capable of surviving transient ionization p... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
287.32K /
12 Page |
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IRF[International Rectifier]
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| Part No. |
IRHMS597160 IRHMS593160
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| OCR Text |
... RDS(on) IRHMS597160 100K Rads (Si) 0.05 IRHMS593160 300K Rads (Si) 0.05 ID -45A* -45A*
IRHMS597160 100V, P-CHANNEL
5
TECHNOLOGY
...gate charge reduces the power losses in switching applications such as DC to DC converters and motor... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
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| File Size |
171.38K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRHNA597160 IRHNA593160
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| OCR Text |
... Rds(on) IRHNA597160 100K Rads (Si) 0.049 IRHNA593160 300K Rads (Si) 0.049 ID Q -47A -47A
IRHNA597160 100V, P-CHANNEL
5 TECHNOLOGY
...gate charge reduces the power losses in switching applications such as DC to DC converters and motor... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
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| File Size |
126.64K /
8 Page |
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it Online |
Download Datasheet |
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