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				Toshiba Semiconductor
Part No.	TPCA8005-h TPCA8005-h06
OCR Text	... transfer admittance: \|Yfs\| =46 s (typ.) Low leakage current: IDss = 10 A (max) (VDs = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDs = 10 ...h Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25) Thermal resis...
Description	high Efficiency DC拢炉DC Converter Applications high Efficiency DC／DC Converter Applications
File Size	437.16K / 7 Page	View it Online	Download Datasheet

				意法半导 STMicroelectronics
Part No.	sTF26NM60N-h
OCR Text	sTF26NM60N-h N-channel 600 V, 0.135 20 A MDmeshTM II Power MOsFET , in TO-220FP Features Type sTF26NM60N-h VDss 600 V RDs(on) max < 0.165 ID 20 A 100% avalanche tested Low input capacitance and gate charge Low gate inpu...
Description	Low gate input resistance
File Size	678.92K / 12 Page	View it Online	Download Datasheet

				Toshiba
Part No.	TPCA8A10-h
OCR Text	...mperature (t c = 25 ) (t = 10 s) (t = 10 s) (note 1) (note 1) (note 2) (note 3) (note 4) symbol v dss v gss i d i dp p d p d p d e ...h 3 6. 6. 6. 6. electrical characteristics electrical characteristics electrical characteristics...
Description	Field Effect Transistor
File Size	276.64K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCA8A10-h
OCR Text	...mperature (t c = 25 ) (t = 10 s) (t = 10 s) (note 1) (note 1) (note 2) (note 3) (note 4) symbol v dss v gss i d i dp p d p d p d e ...h 3 6. 6. 6. 6. electrical characteristics electrical characteristics electrical characteristics...
Description	MOsFETs silicon N-Channel MOs (U-MOs-h/schottky Barrier Diode)
File Size	253.98K / 9 Page	View it Online	Download Datasheet


Part No.	TPCA8006-h
OCR Text	...ansfer admittance: \|y fs \| = 15 s (typ.) ? low leakage current: i dss = 100 a (max) (v ds = 100 v) ? enhancement mode: v th = 3.0 to ...h 2006-01-17 2 thermal characteristics characteristic symbol max unit thermal resistance, chan...
Description	18 A, 100 V, 0.067 ohm, N-ChANNEL, si, POWER, MOsFET
File Size	289.25K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCP8005-h
OCR Text	...transfer admittance: \|Yfs\| = 30 s (typ.) Low leakage current: IDss = 10 A (max) (VDs = 30V) Enhancement mode: Vth = 1.5 to 2.5 V (VDs = 10 V...h Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 5 s) (Note 2a...
Description	high-Effciency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications
File Size	206.47K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCA8048-h
OCR Text	...ransfer admittance: \|Yfs\| = 118 s (typ.) Low leakage current: IDss = 10 A (max) (VDs = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDs = 10 ...h Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc = 25) Thermal res...
Description	switching Regulator Applications Motor Drive Applications DC-DC Converter Applications
File Size	191.16K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCA8045-h
OCR Text	...ransfer admittance: \|Yfs\| = 136 s (typ.) Low leakage current: IDss = 10 A (max) (VDs = 40 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDs = 10 ...h Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc = 25) Thermal res...
Description	high-Effciency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
File Size	194.44K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCA8040-h
OCR Text	...transfer admittance: \|Yfs\| = 68 s (typ.) Low leakage current: IDss = 10 A (max) (VDs = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDs = 10 ...h Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc = 25) Thermal res...
Description	Field Effect Transistor silicon N-Channel MOs Type (U-MOs?h) Field Effect Transistor silicon N-Channel MOs Type (U-MOs楼碌-h)
File Size	136.83K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPC8116-h
OCR Text	... transfer admittance: \|Yfs\| =14 s (typ.) Low leakage current: IDss = -10 A (max) (VDs = -40 V) Enhancement mode: Vth =-0.8 to-2.0 V (VDs =-1...h Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2...
Description	high Efficiency DC拢炉DC Converter Applications
File Size	276.69K / 7 Page	View it Online	Download Datasheet

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