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  rth Datasheet PDF File

For rth Found Datasheets File :: 31123    Search Time::1.938ms    
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    GT40Q32306 GT40Q323

Toshiba Semiconductor
Part No. GT40Q32306 GT40Q323
OCR Text ...ermal resistance (diode) Symbol rth (j-c) rth (j-c) Max 0.625 1.79 Unit C/W C/W Equivalent Circuit Collector Gate Emitter 1 2006-11-01 GT40Q323 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Col...
Description Silicon N Channel IGBT Voltage Resonance Inverter Switching Application

File Size 145.71K  /  6 Page

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    GT40T30106 GT40T301

Toshiba Semiconductor
Part No. GT40T30106 GT40T301
OCR Text ...t) Cies tr ton tf toff VECF trr rth (j-c) 15 51 15 V 0 -15 V IECF = 30 A, VGE = 0 IECF = 30 A, VGE = 0, di/dt = -20 A/s IGBT Diode Test Condition VGE = 25 V, VCE = 0 VCE = 1500 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = ...
Description Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications

File Size 161.53K  /  6 Page

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    2SD2137A 2SB1417 2SB1417A 2SD2137

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137A 2SB1417 2SB1417A 2SD2137
OCR Text ... 2SB1417 Power Transistors rth(t) -- t 10000 Note: rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink 2SB1417, 2SB1417A Thermal resistance rth(t) (C/W) 1000 ...
Description Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR

File Size 53.34K  /  3 Page

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    2SD2137 2SD2137A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137 2SD2137A
OCR Text ... (V) 2 Power Transistors rth(t) -- t 10000 Note: rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink 2SD2137, 2SD2137A Thermal resistance rth(t) (C/W) 1000 ...
Description Silicon NPN triple diffusion planar type(For power amplification)

File Size 52.93K  /  3 Page

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    2SD2138A 2SB1418 2SB1418A 2SD2138

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138A 2SB1418 2SB1418A 2SD2138
OCR Text ...epetitive pulse TC=25C 10000 rth(t) -- t Note: rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink -10 ICP -3 -1 IC 10ms DC t=1ms Thermal resistance rth(t) (C/W) ...
Description Silicon PNP epitaxial planar type Darlington(For power amplification)

File Size 59.81K  /  2 Page

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    2SD2138 2SD2138A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138 2SD2138A
OCR Text ...epetitive pulse TC=25C 10000 rth(t) -- t Note: rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink 10 ICP 3 1 0.3 10ms 0.1 0.03 0.01 1 3 10 30 IC DC t=1ms Thermal re...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 59.65K  /  2 Page

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    2SD2139

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2139
OCR Text ... (V) 2 Power Transistors rth(t) -- t 10000 Note: rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink 2SD2139 Thermal resistance rth(t) (C/W) 1000 100 (1) (...
Description Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification)

File Size 49.15K  /  3 Page

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    GT50J12106 GT50J121

Toshiba Semiconductor
Part No. GT50J12106 GT50J121
OCR Text ...stics Thermal resistance Symbol rth (j-c) Max 0.521 Unit C/W Marking Part No. (or abbreviation code) TOSHIBA GT50J121 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT50J1...
Description Silicon N Channel IGBT High Power Switching Applications

File Size 185.77K  /  6 Page

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    GT50J32506 GT50J325

Toshiba Semiconductor
Part No. GT50J32506 GT50J325
OCR Text ...ermal resistance (diode) Symbol rth (j-c) rth (j-c) Max 0.521 2.30 Unit C/W C/W Equivalent Circuit Collector Marking Part No. (or abbreviation code) TOSHIBA GT50J325 Gate Lot No. JAPAN Emitter A line indicates lead (Pb)-free...
Description Silicon N Channel IGBT High Power Switching Applications

File Size 193.57K  /  7 Page

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    RB731XNTR

ROHM
Part No. RB731XNTR
OCR Text ...3na a= vr=10v n=30pcs time:t(s) rth-t characteristics transient : 1 10 100 1000 0.001 0.1 10 1000 rth(j-a) rth(j-c) 1ms im=1ma if=10ma 300us time mounted on epoxy board ? electrical characteristic curves ...
Description Schottky Barrier Diode

File Size 523.62K  /  6 Page

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