rg-58 pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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rg-58 Datasheet PDF File

For rg-58 Found Datasheets File :: 4132 Search Time::1.61ms
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				ONSEMI[ON Semiconductor]
Part No.	NID5001NT4G NID5001N_06 NID5001N NID5001NT4 NID5001N06
OCR Text	...e is Available Gate Input RG ESD Protection Temperature Limit Current Limit Current Sense Source MAXIMUM RATINGS (TJ = 25C un...58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 ...
Description	Self−Protected FET with Temperature and Current Limit
File Size	62.59K / 5 Page	View it Online	Download Datasheet

				Sony Corporation
Part No.	ICX282AQ
OCR Text	... 24 : Photo sensor VDD RG GND H2B H1B NC VL H1A Pin Description Pin No. Symbol 1 2 3 4 5 6 7 8 9 10 11 12 V4 V...58 During drain charge Item Horizontal transfer clock Symbol H1A, H1B, H2A, H2B two Min....
Description	Diagonal 11mm (Type 2/3) Frame Readout CCD Image Sensor with Square Pixel for Color Cameras
File Size	500.83K / 47 Page	View it Online	Download Datasheet

				SONY
Part No.	CXD3142R
OCR Text	...UB AVS2 AVD4 AVS3 VDD1 VSS1 XRS RG H2 H1 XV1 Note) Symbols in parentheses are the signal names when the LSI is switched by the serial com...58 59 60 61 62 63 64 65 66 67 68 69 SI Symbol XCS SO SCK PCOMP OSCI OSCO CK VDD3 P0 (AEME) P1 (MI...
Description	Signal Processor LSI for Single-Chip CCD Color Camera
File Size	675.69K / 58 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTD6415AN NTD6415AN-1G NTD6415ANT4G
OCR Text	...Vdc, IL(pk) = 23 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds S A mJ 4 4 TL 260 ...58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 --- 0.89 1.27 3.93 --- S A 1 2 3 Z H U F L D 2 PL...
Description	N-Channel Power MOSFET 100 V, 23 A, 55 mΩ N-Channel Power MOSFET 100 V, 23 A, 55 m楼?
File Size	131.55K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PC30KDPBF
OCR Text	...A, VCC = 480V 80 120 VGE = 15V, RG = 23 0.60 Energy losses include "tail" 0.58 mJ and diode reverse recovery 1.18 1.6 See Fig. 9,10,14 s VCC = 360V, TJ = 125C VGE = 15V, RG = 10 , VCPK < 500V 58 TJ = 150C, See Fig. 11,14 42 IC = 16A, ...
Description	INSULATED GATE BIPOALR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	339.12K / 11 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTD6414AN NTD6414AN-1G NTD6414ANT4G
OCR Text	...Vdc, IL(pk) = 32 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds TL 260 C THERMA...58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 --- 0.89 1.27 3.93 --- S A 1 2 3 Z H U F L D 2 PL...
Description	N-Channel Power MOSFET 100 V, 32 A, 37 mΩ N-Channel Power MOSFET 100 V, 32 A, 37 m楼?
File Size	130.39K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM35MX-24A
OCR Text	...VCC = 600V, IC = 35A VGE = 15V, RG = 9.1 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) (IE = 35A) IE = 35A, VGE = 0V (Note. ...58 59 60 61 CR C R C R RN S N T N CR C R C R RP S P T P 1 2 3 4 5 6 7 8 Tr Br Tr Tr Di Tr UP ...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	213.37K / 8 Page	View it Online	Download Datasheet

				California Eastern Labs
Part No.	NE6510179A NE6510179A-T1 NE6510179 NE6510179A-A NE6510179A-T1-A
OCR Text	...Hz, VDS = 3.5 V, Pin = +25 dBm, Rg = 100 IDSQ = 200 mA (RF OFF)2 Functional Characteristics ADD ID IDSS Electrical DC Characteris...58.36 56.38 54.34 52.35 50.45 48.50 46.53 44.55 42.67 40.91 39.04 37.19 35.36 33.69 31.91 30.21 28.4...
Description	NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
File Size	238.22K / 10 Page	View it Online	Download Datasheet

For rg-58 Found Datasheets File :: 4132 Search Time::1.61ms
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