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rg-187 u Datasheet PDF File

For rg-187 u Found Datasheets File :: 1105 Search Time::1.234ms
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				MOTOROLA[Motorola, Inc]
Part No.	MGY20N120D
OCR Text	...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient M...187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 L F 2 PL G W D 3 PL 0.25 (0...
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
File Size	254.56K / 6 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFX50N50 IXFX55N50
OCR Text	...t 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C 50N50 55N50 50N50 55N50 50N50 55N50 VDSS IXFX 50N50 IXFX 55N50 ID25 RDS(on) 500...187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFX 50N50 IXFX 55N50 Figure 1. Output Charact...
Description	HiPerRF Power MOSFETs HiPerFET Power MOSFETs
File Size	93.22K / 4 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXGR60N60C2 IXGR60N60C2D1
OCR Text	...C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ VCE 600 V TC = 25C Maximum Ratings 600 600 20 30 75 48 39 300 ICM = 10...187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,...
Description	Lightspeed 2TM Series (Electrically Isolated Back Surface) 75 A, 600 V, N-CHANNEL IGBT
File Size	608.55K / 6 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXSK30N60BD1 IXST30N60BD1 IXSH30N60BD1
OCR Text	...5C, 1 ms VGE = 15 V, TJ = 125C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125C RG = 33 W, non repetitiv...187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-5 IXSH 30N60BD...
Description	High Speed IGBT with Diode
File Size	117.17K / 5 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXSK30N60CD1 IXST30N60CD1 IXSH30N60CD1
OCR Text	...5C, 1 ms VGE = 15 V, TJ = 125C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125C RG = 33 W, non repetitiv...187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 ...
Description	Short Circuit SOA Capability
File Size	71.36K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFN80N50 IXFN75N50
OCR Text	... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 64 6 5 700 -55 ... +150 150 -55 ... +150 Either Source terminal of miniBLOC can be us...187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFN 75N50 IXFN 80N50 Figure 1. Output Charact...
Description	(IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET
File Size	125.53K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10025JLC
OCR Text	... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 34 136 1.3...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs POWER MOS VI 1000V 34A 0.250 Ohm
File Size	34.89K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10025JVFR
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT pF 15000 1360 710 660 51 250 22 20 97 16 18000 1900 1065 990 75 375 44 40 14...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 34A 0.250 Ohm
File Size	73.43K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10025JVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 15000 1360 710 660 51 250 22 20 97 16 18000 1900 1065 990 75 375 44 40 145 3...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 34A 0.250 Ohm
File Size	71.02K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT30M19JV APT30M19JVFR
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT pF 18000 3250 980 650 115 290 22 33 70 10 21600 4550 1470 975 175 435 44 66 ...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs POWER MOS V 300V 130A 0.019 Ohm
File Size	76.32K / 4 Page	View it Online	Download Datasheet

For rg-187 u Found Datasheets File :: 1105 Search Time::1.234ms
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