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E007280 MBR1645 TC144E 5X5R1 HER306 C847A 03820 178M05
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  revolutionary pinout 512k x 8 Datasheet PDF File

For revolutionary pinout 512k x 8 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM29N040T
Description 512k x 8 Bit NAND Flash Memory(512k x 8NAND闪速存储器)

File Size 218.61K  /  21 Page

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    Fujitsu Limited
Part No. MBM29F040A-90
Description 4M (512k ×8) BIT Flash Memoery(512k ×85V 电源电压闪速存储器)

File Size 345.38K  /  42 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM29V040T
Description 512k x 8 Bit NAND Flash Memory(512k x 8NAND闪速存储器)

File Size 223.64K  /  21 Page

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    Cypress Semiconductor Corp.
Part No. CY7C1440AV33 CY7C1442AV33 CY7C1446AV33
Description 36-Mbit (1M x 36/2M x 18/512k x 72) Pipelined Sync SRAM(36-Mb (1M x 36/2M x 18/512k x 72)管道式同步SRAM)

File Size 528.73K  /  31 Page

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    Winbond Electronics Corp
Part No. W24V04
Description 512k×8bit CMOS Static RAM(512k×8位CMOS静态RAM)

File Size 153.09K  /  11 Page

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    Fujitsu Limited
Part No. MBM29F800B-12 MBM29F800B-90 MBM29F800T-12 MBM29F800T-90
Description 8M (1M ×8/512k ×6) Bit Falsh Memory(V 电源电压1M ×8/512k ×6位闪速存储器)

File Size 437.57K  /  51 Page

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    Infineon Technologies A...
Part No. IDW30G120C5B
Description revolutionary semiconductor material - Silicon Carbide

File Size 563.10K  /  10 Page

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    Infineon Technologies A...
Part No. IDW40G120C5B
Description revolutionary semiconductor material - Silicon Carbide

File Size 563.31K  /  10 Page

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    Infineon Technologies A...
Part No. IDW10G120C5B
Description revolutionary semiconductor material - Silicon Carbide

File Size 785.38K  /  10 Page

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    Infineon Technologies A...
Part No. IDW20G120C5B
Description revolutionary semiconductor material - Silicon Carbide

File Size 563.15K  /  10 Page

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