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Spansion, Inc. SPANSION LLC
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Part No. |
S29GL032N90FAI033 S29GL032N90BAI043 S29GL032N70TAIR20 S29GL032N90TAIR23 S29GL032N70FFIR22 S29GL032N70TFIR30
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Description |
64 megabit, 32 megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA64 64 megabit, 32 megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA48 2M X 16 FLASH 3V PROM, 70 ns, PDSO56 2M X 16 FLASH 3V PROM, 90 ns, PDSO56 2M X 16 FLASH 3V PROM, 70 ns, PBGA64 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
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File Size |
2,208.18K /
77 Page |
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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Part No. |
AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F020A-200FCB AM28F020A-70FC AM28F020A-150EC AM28F020A-70EC AM28F020A-90ECB AM28F020A-70FE AM28F020A-70FEB AM28F020A-90FE AM28F020A-90FEB AM28F020A-150FEB AM28F020A-150ECB AM28F020A-70ECB AM28F020A-120ECB AM28F020A-120JCB AM28F020A-120EIB AM28F020A-200EEB AM28F020A-120PCB AM28F020A-120EEB AM28F020A-200EIB AM28F020A-120JEB AM28F020A-120JIB AM28F020A-120PIB AM28F020A-120FEB AM28F020A-120PEB AM28F020A-120FIB AM28F020A-90PEB AM28F020A-90EEB AM28F020A-90EI AM28F020A-90EIB AM28F020A-200PCB AM28F020A-150JIB AM28F020A-70PCB AM28F020A-70EEB AM28F020A-150JC AM28F020A-200PIB AM28F020A-200JIB AM28F020A-200JEB AM28F020A-150PIB AM28F020A-90FCB AM28F020A-200EC AM28F020A-150JE AM28F020A-70JIB AM28F020A-200FIB
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Description |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
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File Size |
244.09K /
35 Page |
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it Online |
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HARRIS SEMICONDUCtoR INTERSIL[Intersil Corporation]
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Part No. |
JANSR2N7402 FN4374
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Description |
3A, 500V, 2.70 Ohm, rad hard, N-Channel Power MOSFET From old datasheet system 3A, 500V, 2.70 Ohm, rad hard, Channel Power MOSFET 3A/ 500V/ 2.70 Ohm/ rad hard/ N-Channel Power MOSFET 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, to-257AA
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File Size |
44.98K /
8 Page |
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http:// Maxwell Technologies, Inc
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Part No. |
28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C010TRT2DI-20 28C010TRPDE-15 28C010TRPDE-12 28C010TRPDB-15 28C010TRT4DB-15 28C010TRT4DE-12 28C010TRT4DE-15 28C010TRT4DS-15 28C010TRT4DB-20 28C010TRT4FB-12 28C010TRT4FE-12 28C010TRT4FE-15 28C010TRT4DI-12 28C010TRT4DS-12 28C010TRT4FI-15 28C010TRT4FS-15 28C010TRT4FI-12 28C010TRTDB-15 28C010TRTDE-15 28C010TRTFE-12 28C010TRTFB-12 28C010TRTFS-15 28C010TRTFB-15 28C010TRTFI-12 28C010TRPFE-20 28C010TRPDB-12 28C010TRT1FS-20 28C010TRT1FI-12 28C010TRT2FI-15 28C010TRPFI-15 28C010TRPFI-12 28C010TRT2DE-15 28C010TRT1FI-20 28C010TRT4DI-20 28C010TRT1FB-15 28C010TRT2DE-20 28C010TRT2DB-15 28C010TRT2DB-20 28C010TRT2DS-20 28C010TRPFS-12 28C010TRTFE-15 28C010TRTFE-20 28C010TRT2FS-12
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Description |
1 megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5v, 200 ns, DIP32 1 megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5v, 200 ns, DFP32 1 megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5v, 150 ns, DIP32 1 megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5v, 150 ns, DFP32 1 megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5v, 120 ns, DFP32 POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5v, 200 ns, DFP32 150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5v, 120 ns, DIP32 Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes CONNECtoR ACCESSORY Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
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File Size |
356.86K /
19 Page |
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PEREGRINE[Peregrine Semiconductor Corp.]
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Part No. |
PE9354ES 9354-00 9354-01 9354-11 PE9354 PE9354-EK
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Description |
SPDT High Power UltraCMOS?/a> RF Switch rad hard for Space Applications SPDT High Power UltraCMOS RF Switch rad hard for Space Applications SPDT High Power UltraCMOSRF Switch rad hard for Space Applications SPDT High Power UltraCMOS⑩ RF Switch rad hard for Space Applications
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File Size |
183.24K /
7 Page |
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Price and Availability
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