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Matsushita Electric Works(Nais)
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| Part No. |
AQV210HLA AQV210HLAX AQV210HLAZ
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| Description |
PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350v, load current 130 mA. Tube packing style. PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350v, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350v, load current 130 mA. Tape and reel packing style, picked from the 4/5/6-pin side.
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| File Size |
41.12K /
3 Page |
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Matsushita Electric Works(Nais)
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| Part No. |
AQS610TSX AQS610TSZ
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| Description |
PhotoMOS relay, GU (general use) type, multi-function (1a1b MOSFET & optocoupler). Output rating load voltage 350v AC/DC, load current 100 mA.
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| File Size |
49.30K /
4 Page |
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| Part No. |
APT3507DN APT6014DN APT35-101DN APT3555DN APT55-101DN APT551R2DN APT5514DN APT4055DN APT75-101DN APT100-101DN APT90-101DN APT80-101DN APT60-101DN APT45-101DN APT40-101DN APT50-101DN APT752RDN APT802RDN
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| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 350v V(BR)DSS | 60A I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 43A I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 350v V(BR)DSS | 25a I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 350v V(BR)DSS | 12A I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 17.5a I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 8A I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 43A I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 12A I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 750V V(BR)DSS | 12.5a I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 11A I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 12.5a I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 17.5a I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 22.5a I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25a I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 22.5a I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 750V V(BR)DSS | 6A I(D) | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 6A I(D) | CHIP
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| File Size |
66.79K /
1 Page |
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Central Semiconductor, Corp.
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| Part No. |
CMPTA42E
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| Description |
TRANSISTOR | BJT | NPN | 350v V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|叩| 350v五(巴西)总裁| 500mA的一(c)| SOT - 23封装
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| File Size |
112.42K /
2 Page |
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it Online |
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Semelab
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| Part No. |
BDY96
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| Description |
TRANSISTOR | BJT | NPN | 350v V(BR)CEO | 10A I(C) | TO-3 Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
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| File Size |
10.50K /
1 Page |
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it Online |
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Price and Availability
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