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For polysilicon Found Datasheets File :: 1503    Search Time::2.562ms    
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    M5M51008CFP M5M51008CKR-55 M5M51008CKR-55X M5M51008CKR-70 M5M51008CKR-70X M5M51008CKV M5M51008CP M5M51008CP-55H M5M51008

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. M5M51008CFP M5M51008CKR-55 M5M51008CKR-55X M5M51008CKR-70 M5M51008CKR-70X M5M51008CKV M5M51008CP M5M51008CP-55H M5M51008CRV M5M51008CVP M5M51008KR-70X M5M51008KR-55X M5M51008KR-70H M5M51008KR-55H M5M51008FP-70H M5M51008VP-55H M5M51008VP-55X M5M51008VP-70H M5M51008VP-70X M5M51008CFP-55H M5M51008CFP-55X M5M51008CVP-55H M5M51008CVP-55X M5M51008CFP-70H M5M51008CFP-70X M5M51008CVP-70H M5M51008CVP-70X M5M51008KV-55H M5M51008KV-55X M5M51008KV-70H M5M51008KV-70X M5M51008RV-70X M5M51008CCP-55H M5M51008CCP-55X M5M51008CCP-70H M5M51008CCP-70X M5M51008CKR-55H M5M51008CKR-70H M5M51008CKV-55H M5M51008CKV-55X M5M51008CKV-70H M5M51008CKV-70X M5M51008CP-55X M5M51008CP-70H M5M51008CP-70X M5M51008CRV-55H M5M51008CRV-55X M5M51008CRV-70H M5M51008CRV-70X M5M51008FP-55H M5M51008FP-55X M5M51008FP-70X M5M51008RV-55H M5M51008RV-55X M5M51008RV-70H
OCR Text ...sing high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operat...
Description 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
Octal D-Type Transparent Latches With 3-State Outputs 20-SSOP -40 to 85
File Size 86.13K  /  7 Page

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    M5M51008DFP M5M51008DFP-55H M5M51008DFP-70H M5M51008DKR-55H M5M51008DKR-70H M5M51008DKV M5M51008DKV-55H M5M51008DKV-70H

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M5M51008DFP M5M51008DFP-55H M5M51008DFP-70H M5M51008DKR-55H M5M51008DKR-70H M5M51008DKV M5M51008DKV-55H M5M51008DKV-70H M5M51008DRV M5M51008DRV-55H M5M51008DRV-70H M5M51008DVP M5M51008DVP-55H M5M51008DVP-70H
OCR Text ...sing high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operat...
Description 1048576位（131072 - Word-8-bit）的CMOS static RAM 1048576位（131072 - Word8位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word8位）的CMOS静态RAM
Octal D-Type Transparent Latches With 3-State Outputs 20-SO -40 to 85
File Size 59.64K  /  8 Page

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    M5M51016BRT-10L-I M5M51016BRT-10LL-I M5M51016BRT-70L M5M51016BRT-70LL M5M51016BTP-10L-I M5M51016BTP-10LL-I M5M51016BTP-7

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M5M51016BRT-10L-I M5M51016BRT-10LL-I M5M51016BRT-70L M5M51016BRT-70LL M5M51016BTP-10L-I M5M51016BTP-10LL-I M5M51016BTP-70L M5M51016BTP-70LL 5101670I M5M51016BTP-70L-I M5M51016BTP-70LL-I M5M51016RT-10L-I M5M51016RT-10LL-I M5M51016RT-70L-I M5M51016RT-70LL-I M5M51016RT-70L M5M51016RT-70LL
OCR Text ...d using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation current and ideal for th...
Description 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位（65536字由16位）的CMOS静态RAM
From old datasheet system
1048576-1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
File Size 79.27K  /  7 Page

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    M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP-10VL-I M5M51016BTP-10VLL-I 5101610I M5M51016RT-10VL-I M5M51016RT-10VL

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP-10VL-I M5M51016BTP-10VLL-I 5101610I M5M51016RT-10VL-I M5M51016RT-10VLL-I
OCR Text ...d using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation current and ideal for th...
Description From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-bit (65536-word by 16-bit) CMOS static RAM
File Size 76.00K  /  7 Page

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    M5M51016BRT-12VL-I M5M51016BRT-12VLL-I M5M51016BTP-12VL-I M5M51016BTP-12VLL-I M5M51016BTP 5101612I M5M51016RT-12VL-I M5M

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M5M51016BRT-12VL-I M5M51016BRT-12VLL-I M5M51016BTP-12VL-I M5M51016BTP-12VLL-I M5M51016BTP 5101612I M5M51016RT-12VL-I M5M51016RT-12VLL-I
OCR Text ...d using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation current and ideal for th...
Description Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85
From old datasheet system
1048576-BIT CMOSSTATIC RAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
File Size 75.75K  /  7 Page

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    M5M51016BRT-12VL M5M51016BRT-12VLL M5M51016BTP-12VL M5M51016BTP-12VLL 5101612L M5M51016RT-12VL M5M51016RT-12VLL M5M51016

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M5M51016BRT-12VL M5M51016BRT-12VLL M5M51016BTP-12VL M5M51016BTP-12VLL 5101612L M5M51016RT-12VL M5M51016RT-12VLL M5M51016BRT-RT-12VL
OCR Text ...d using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation current and ideal for th...
Description Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85
From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
File Size 75.70K  /  7 Page

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    STGB10NB37LZ 6207

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STGB10NB37LZ 6207
OCR Text ... CE(s at) < 1.8 V IC 10 A polysilicon GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & R...
Description N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
From old datasheet system
File Size 91.38K  /  8 Page

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    STGB20NB32LZ STGB20NB32LZ-1

ST Microelectronics
STMicroelectronics
Part No. STGB20NB32LZ STGB20NB32LZ-1
OCR Text ...V IC 20 A 20 A 3 1 3 12 polysilicon GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING DPAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & RE...
Description N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED POWERMESH IGBT
N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH IGBT
File Size 461.09K  /  11 Page

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    STGB20NB37LZ

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. STGB20NB37LZ
OCR Text ... CE(s at) < 2.0 V IC 20 A polysilicon GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & R...
Description N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT N通道钳位20A条采用D2PAK IGBT的内部钳位PowerMESH
N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
File Size 49.58K  /  6 Page

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    STGB7NB40LZ

STMICROELECTRONICS[STMicroelectronics]
Part No. STGB7NB40LZ
OCR Text ...VCE(sat) < 1.50 V IC 14 A polysilicon GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE 3 1 D2PAK DESCRIPTION Using the latest high voltage tec...
Description N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH⑩ IGBT
N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT
File Size 390.22K  /  8 Page

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For polysilicon Found Datasheets File :: 1503    Search Time::2.562ms    
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