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IBM Microeletronics
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| Part No. |
IBMN325804CT3
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| OCR Text |
...nitialized in a predefined man- ner. during power on, all v dd and v ddq pins must be built up simultaneously to the specified voltage when the input signals are held in the nop state. the power on voltage must not exceed v dd +0.3v on an... |
| Description |
256MbMbit x 8 I/O x 4 BankSynchronous DRAM(256M位（8Mx 8 I/O x 4 组）同步动态RAM)
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| File Size |
667.43K /
66 Page |
 View
it Online |
Download Datasheet
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Lite-On Technology, Corp.
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| Part No. |
24LCS52IST 24LCS52TSN
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| OCR Text |
... tr o l l o gic xdec hv g e ner a tor st a nd a rd arr a y sof t w a r e w r i t e w r ite p r ot e ct ci r cuit r y ydec vcc vss s e n s e amp r/w c o nt r ol s d a s c l a0 a 1 a2 wp p r ot e cted a r ea ( 0 0 h -7 f h) 24... |
| Description |
Microcontroller Programming Adapters
EPROM Microcontrollers with Real-Time Clock I2C串行EEPROM
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| File Size |
176.45K /
12 Page |
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it Online |
Download Datasheet |
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Micron Technology, Inc.
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| Part No. |
MT4C16257
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| OCR Text |
...casl# or cash# in the same man- ner during read cycles for the mt4c16257. functional description each bit is uniquely addressed through the 18 address bits during read or write cycles. these are entered 9 bits (a0 -a8) at a time. ras# is us... |
| Description |
256K x 16 FPM DRAM(256K x 16快速页面模式动态RAM)
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| File Size |
209.91K /
18 Page |
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it Online |
Download Datasheet |
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IBM Microeletronics
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| Part No. |
IBMN312164CT3 IBMN312804CT3
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| OCR Text |
...nitialized in a predefined man- ner. during power on, all v dd and v ddq pins must be built up simultaneously to the specified voltage when the input signals are held in the nop state. the power on voltage must not exceed v dd +0.3v on an... |
| Description |
128Mb(8Mbit x 4 I/O x 4 Bank) Synchronous DRAM(128M8Mx 4 I/O x 4 同步动态RAM)
128Mb(4Mbit x 8 I/O x 4 Bank) Synchronous DRAM(128M4Mx 8 I/O x 4 同步动态RAM)
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| File Size |
666.74K /
66 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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