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CDIL[Continental Device India Limited]
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| Part No. |
CSB772P CSB772R CSB772 CSB772E CSB772Q
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| Description |
10.000W medium power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W medium power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W medium power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W medium power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W medium power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio frequency power Amplifier and Low Speed Switching
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| File Size |
132.88K /
3 Page |
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Download Datasheet
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CREE power
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
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it Online |
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KEC[KEC(Korea Electronics)]
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| Part No. |
KTC2803
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| Description |
EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO frequency high frequency power AMPLIFIER)
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| File Size |
236.07K /
2 Page |
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SemeLAB
SEME-LAB[Seme LAB]
Lumex, Inc.
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| Part No. |
2N2894DCSM
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| Description |
DUAL high SPEED, medium power, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
high Speed medium power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For high Reliability Application(高速、中等功率、开关型PNP晶体管（高可靠性、陶瓷表贴封装）) 高速中功率开关晶体管进步党在全封闭六窑业表面贴装封装，高可靠性的应用（高速，中等功率，开关型进步党晶体管（高可靠性，陶瓷表贴封装））
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| File Size |
15.80K /
2 Page |
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Price and Availability
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