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INTEGRATED SILICON SOLUTION INC
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Part No. |
IS61LF12832-8.5TQI IS61LF12832-7.5TQI IS61LF12832-7.5B IS61LF12832-7.5BI
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OCR Text |
...dqd, conditioned by bwe being low. a low on gw input would cause all bytes to be written. bursts can be initiated with either adsp (ad...ind. 310 300 ma oe = v ih , vcc = max. cycle time t kc min. i sb standby current device desel... |
Description |
128K x 32, 128K x 36 synchronous flow-through static RAM 128K X 32 CACHE SRAM, 8.5 ns, PQFP100
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File Size |
113.41K /
15 Page |
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it Online |
Download Datasheet |
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MAXIM - Dallas Semiconductor
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Part No. |
DS1554
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OCR Text |
... system operation brought on by low v cc levels. packages the ds1554 is available in two packages (32-pin dip and 34-pin powercap module). the 32-pin dip style module integrates the crystal, lithium energy source, and silicon all in... |
Description |
256k Nonvolatile, Y2K-Compliant Timekeeping RAM
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File Size |
463.24K /
21 Page |
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it Online |
Download Datasheet |
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Maxim Integrated Products, Inc.
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Part No. |
DS1225Y
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OCR Text |
...prom ? unlimited write cycles ? low-power cmos ? jedec standard 28pin dip package ? read and write access times as fast as 150 ns ? full 1...ind pin assignment 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 nc a12... |
Description |
64K Nonvolatile SRAM(64K 非易失性静态RAM)
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File Size |
84.72K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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