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For intensive-contact Found Datasheets File :: 473 Search Time::1.454ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K5D5657ACM K5D5657ACM-F015
OCR Text	... command inputs. Even the write-intensive systems can take advantage of FLASHs extended reliability of 100K program/erase cycles with real t...contact to the memory marketing team in samsung electronics when considering the use of a product co...
Description	256Mb NAND and 256Mb Mobile SDRAM
File Size	1,846.05K / 74 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronics
Part No.	K5D5657DCM-F015 K5D5657DCM-F0CL
OCR Text	... command inputs. Even the write-intensive systems can take advantage of FLASHs extended reliability of 100K program/erase cycles with real t...contact to the memory marketing team in samsung electronics when considering the use of a product co...
Description	MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM MCP / 256Mb NAND and 256Mb Mobile SDRAM
File Size	1,288.81K / 74 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F1G08R0A K9K2G08U1A K9F1G08U0A
OCR Text	...rgining of data. Even the write-intensive systems can take advantage of the K9F1G08X0As extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08X0A is an op...
Description	128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
File Size	879.50K / 37 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K9WAG08U1M
OCR Text	...rgining of data. Even the write-intensive systems can take advantage of the K9K8G08U0Ms extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0M is an opt...
Description	(K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
File Size	1,094.72K / 50 Page	View it Online	Download Datasheet

				http:// LAMBDA[DENSEI-LAMBDA]
Part No.	PAF500F24-28 PAF500F24-12 PAF700F48-12 PAF700F48-28 PAF600F48-28 PAF500F48 PAF500F48-12 PAF500F48-28 PAF500F48-3.3 PAF500F48-5 PAF600F24-12 PAF600F24-28 PAF600F48-12
OCR Text	...and telecommunication equipment Intensive control circuit, Zero Voltage Switching (ZVS) High efficiency, low noise, high power density, good...Contact us about delivery before ordering. Outline drawing Note 1: Input & output terminal.......
Description	High Power DC-DC Module 500W ~ 700W Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:21-41 RoHS Compliant: No
File Size	83.71K / 1 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K9K2G08U0A-F K9K2G08X0A-J K9K2G08X0A K9K2G08R0A K9K2G08U0A
OCR Text	...rgining of data. Even the write-intensive systems can take advantage of the K9K2G08X0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K2G08X0A is an opt...
Description	FLASH MEMORY
File Size	868.14K / 38 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M-Y K9K2G08U0M K9XXG08UXM-E K9XXG08UXM-K K9XXG08UXM-P K9XXG08UXM-Y K9XXG16UXM-E K9XXG16UXM-K K9XXG16UXM-P K9XXG16UXM-Y K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08Q0M-PCB0 K9K2G08U0M-VCB0 K9K2G08U0M-FCB0 K9K2G08Q0M-YCB0
OCR Text	...rgining of data. Even the write-intensive systems can take advantage of the K9K2GXXX0Ms extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K2GXXX0M is an op...
Description	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
File Size	676.60K / 39 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K5P2880YCM
OCR Text	... command inputs. Even the write-intensive systems can take advantage of the FLASHs extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. These algorithms have been im...
Description	Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
File Size	549.77K / 29 Page	View it Online	Download Datasheet

For intensive-contact Found Datasheets File :: 473 Search Time::1.454ms
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