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For instant-read Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |

				http:// Sony Corporation
Part No.	CXA3541N
Description	2-channel Read/Write Amplifier for GMR-Ind Head Hard Disk Drive 2-Channel Read/Write Amplifier for GMR(Giant Magneto Resistive-Inductive)-Ind Head Hard Disk Drive(双通道写放大器（用于硬盘驱动器中大型磁发电机感抗磁头）)
File Size	188.66K / 17 Page	View it Online	Download Datasheet

				RF Micro Devices, Inc.
Part No.	UPC2134GT-004
Description	4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电 4-Channel Disk/Tape Read/Write Circuit
File Size	216.93K / 7 Page	View it Online	Download Datasheet

				Advanced Micro Devices, Inc.
Part No.	AM29DL640G90 AM29DL640G120 AM29DL640G70PCEN AM29DL640G70WHI
Description	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 64兆位米8 4米x 16位）.0伏的CMOS只，同步写闪 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 4M X 16 FLASH 3V PROM, 70 ns, PBGA63
File Size	734.14K / 52 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1261V18 CY7C1261V18-300BZC CY7C1261V18-300BZI CY7C1261V18-300BZXC CY7C1261V18-300BZXI CY7C1261V18-333BZC CY7C1261V18-333BZI CY7C1261V18-333BZXC CY7C1261V18-333BZXI CY7C1261V18-375BZC CY7C1261V18-375BZI CY7C1261V18-375BZXC CY7C1261V18-375BZXI CY7C1261V18-400BZC CY7C1261V18-400BZI CY7C1261V18-400BZXC CY7C1261V18-400BZXI CY7C1263V18 CY7C1263V18-300BZC CY7C1263V18-300BZI CY7C1263V18-300BZXC CY7C1263V18-300BZXI CY7C1263V18-333BZC CY7C1263V18-333BZI CY7C1263V18-333BZXC CY7C1263V18-333BZXI CY7C1263V18-375BZC CY7C1263V18-375BZI CY7C1263V18-375BZXC CY7C1263V18-375BZXI CY7C1276V18 CY7C1276V18-300BZC CY7C1276V18-300BZI CY7C1276V18-300BZXC CY7C1276V18-300BZXI CY7C1276V18-333BZC CY7C1276V18-333BZI CY7C1276V18-333BZXI CY7C1276V18-375BZC CY7C1276V18-375BZI CY7C1276V18-375BZXC CY7C1276V18-375BZXI CY7C1263V18-400BZC CY7C1263V18-400BZI CY7C1263V18-400BZXC CY7C1263V18-400BZXI CY7C1265V18-333BZC
Description	36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
File Size	1,096.09K / 28 Page	View it Online	Download Datasheet

				ETC List of Unclassifed Manufacturers
Part No.	TC57512AD-15 TC57512AD-20
Description	65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY 65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
File Size	675.44K / 13 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1145V18-300BZXC CY7C1156V18-300BZXC CY7C1141V18-300BZXC CY7C1143V18-300BZXC CY7C1141V18-300BZC CY7C1141V18-300BZI CY7C1145V18-300BZXI CY7C1141V18-300BZXI CY7C1143V18-300BZXI CY7C1143V18-300BZC CY7C1145V18-300BZI CY7C1145V18-300BZC CY7C1143V18-300BZI CY7C1156V18-300BZI CY7C1156V18-300BZC
Description	18-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 18-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
File Size	1,010.29K / 28 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	LE25FW418A
Description	4M-bit (512K×8) Serial Flash Memory with High-Density Read Mode 4M-bit (512K隆驴8) Serial Flash Memory with High-Density Read Mode
File Size	216.85K / 27 Page	View it Online	Download Datasheet

For instant-read Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |