id-6.8a pdf Datasheet P11 Full Text Search --- IC-ON-LINE

id-6.8a Datasheet PDF File

For id-6.8a Found Datasheets File :: 3817 Search Time::1.406ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFRU9310 IRFU9310 IRFR9310
OCR Text	...S = -400V G S RDS(on) = 7.0 ID = -1.8A Description Third Generation HEXFETs from International Rectifier utilize advanced processing...6 and 13 --- VDD = -200V --- I D = -1.1A ns --- RG = 21 --- RD = 180, See Fig. 10 D Between lead, ...
Description	-400V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) 功率MOSFET（减振钢板基本\u003d-00V，的Rds（on）\u003d 7.0ohm，身份证\u003d- 1.8A
File Size	110.22K / 10 Page	View it Online	Download Datasheet

				SYNC-POWER[SYNC POWER Crop.]
Part No.	SPP3095T252RG SPP3095
OCR Text	...70 TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical -30 20 Unit V V A A A W /W -12 -8 -20 -15 40 20 -55/150 -55/150 105...6 VDS=-15V,VGS=0V f=1MHz IS=-2.5A,VGS =0V IGSS -30 -1.0 -3.0 100 -1 -5 0.083 0.117 8 -0.8 5.8 0.8...
Description	P-Channel Enhancement Mode MOSFET
File Size	201.62K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors] http://
Part No.	FY8ABJ-03
OCR Text	............................ 20m q ID ......................................................................................... -8A SOP-...6 -2.0 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN...
Description	Power MOSFETs: FY Series Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GTS; No. of Contacts:11; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight Pch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	42.37K / 4 Page	View it Online	Download Datasheet

				Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
Part No.	FY8AAJ-03A
OCR Text	............................ 23m q ID ........................................................................................... 8A SOP-8 ...6 7 5 3 2 7 5 3 2 7 5 3 2 tw = 100s 101 1ms 10ms 100ms 1.2 0.8 100 0.4 10-1 7 5...
Description	GT 24C 24#16 SKT RECP MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	42.22K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	FY8AAJ-03A
OCR Text	............................ 23m q ID ........................................................................................... 8A SOP-8 ...6 7 5 3 2 7 5 3 2 7 5 3 2 tw = 100s 101 1ms 10ms 100ms 1.2 0.8 100 0.4 10-1 7 5...
Description	HIGH-SPEED SWITCHING USE GT 24C 24#16 SKT RECP
File Size	37.27K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	FW341
OCR Text	...ge Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg duty cycle1% duty cycle1% duty cycle1% Mounted on a ceramic board (2000mm2!0.8mm...6 14 1.4 1.7 150 --55 to +150 P-channel --30 20 --2.5 --3 --4.5 --10 Unit V V A A A A W W C C Ele...
Description	Pch Nch General-Purpose Switching Device Applications
File Size	56.54K / 6 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	FSYE23A0R4 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3
OCR Text	... . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...6.1 18 7 750 180 50 MAX 5.0 4.0 25 250 100 200 2.77 0.33 0.538 15 30 45 20 57 38 1.9 7.4 20 3.0 UNIT...
Description	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 8 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	57.42K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	FSYE13A0R4 FSYE13A0D FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3
OCR Text	... . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...6.5 20 8 760 310 110 0.160 0.246 15 70 35 30 59 40 1.9 7.8 23 3.0 UNITS V V V V A A nA nA V ns ns ...
Description	Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	55.19K / 8 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	FSS107 1305
OCR Text	...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Conditions Ratings -20 10 ...
Description	P-Channel Silicon MOSFET From old datasheet system Load Switching Applications
File Size	40.55K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] http://
Part No.	2SJ550 2SJ550L 2SJ550S
OCR Text	...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -15 -60 -15 Unit V V A A A A mJ W C C Body-drain diode reverse ...6.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.075 0.105 11 850 420 110 12 75 125 75 -1.1 70 Ma...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	55.48K / 9 Page	View it Online	Download Datasheet

For id-6.8a Found Datasheets File :: 3817 Search Time::1.406ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |